Our study from incident PD patients suggested that (i) dialysate the IL-6 system is a potent determinant of baseline PSTR and (ii) elevation of IL-6 in the dialysate is associated with up-regulation of intra-peritoneal inflammatory and angiogenic molecules.
Achieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.
Triboelectric nanogenerators (TENGs) are used as self-power sources for various types of devices by converting external waves, wind, or other mechanical energies into electric power. However, obtaining a high-output performance is still of major concern for many applications. In this study, to enhance the output performance of polydimethylsiloxane (PDMS)-based TENGs, highly dielectric TiO2−x nanoparticles (NPs) were embedded as a function of weight ratio. TiO2−x NPs embedded in PDMS at 5% showed the highest output voltage and current. The improved output performance at 5% is strongly related to the change of oxygen vacancies on the PDMS surface, as well as the increased dielectric constant. Specifically, oxygen vacancies in the oxide nanoparticles are electrically positive charges, which is an important factor that can contribute to the exchange and trapping of electrons when driving a TENG. However, in TiO2−x NPs containing over 5%, the output performance was significantly degraded because of the increased leakage characteristics of the PDMS layer due to TiO2−x NPs aggregation, which formed an electron path.
The electrical and optical properties of inorganic–organic hybrid light emitting transistors (HLETs) are investigated, which are fabricated using the n‐type semiconductor zinc‐oxynitride (ZnON) as an electron transporting layer and the poly(p‐phenylene vinylene)‐based copolymer, Super Yellow (SY), as the light emitting layer. Additionally, the influence of various source (S)–drain (D) electrodes (Al, Ag, and Au) with different work functions (WFs) (4.1, 4.6, and 5.1 eV, respectively) on the performance of HLETs is studied. In order to increase the rate of hole injection from the metal electrodes and increase hole accumulation at the emissive layer, the use of a molybdenum oxide (MoOx) interlayer is also investigated. As a result, optimized devices using MoOx/Au hole injecting electrodes yield high brightness of up to 3.04 × 104 cd∙m−2 at a low threshold voltage of 4.79 V. This study provides valuable information about the role of the WF of S–D electrodes in HLETs, which may be exploited to improve the device performance of optoelectronic devices in the future.
Transition metal dichalcogenides (TMDCs) are promising next-generation materials for optoelectronic devices because, at subnanometer thicknesses, they have a transparency, flexibility, and band gap in the near-infrared to visible light range. In this study, we examined continuous, large-area MoSe film, grown by molecular beam epitaxy on an amorphous SiO/Si substrate, which facilitated direct device fabrication without exfoliation. Spectroscopic measurements were implemented to verify the formation of a homogeneous MoSe film by performing mapping on the micrometer scale and measurements at multiple positions. The crystalline structure of the film showed hexagonal (2H) rotationally stacked layers. The local strain at the grain boundaries was mapped using a geometric phase analysis, which showed a higher strain for a 30° twist angle compared to a 13° angle. Furthermore, the photon-matter interaction for the rotational stacking structures was investigated as a function of the number of layers using spectroscopic ellipsometry. The optical band gap for the grown MoSe was in the near-infrared range, 1.24-1.39 eV. As the film thickness increased, the band gap energy decreased. The atomically controlled thin MoSe showed promise for application to nanoelectronics, photodetectors, light emitting diodes, and valleytronics.
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