Comparative study of various release methods for gold surface micromachining

Sharma, Akshdeep; Jhanwar, Prachi; Bansal, Deepak; Kumar, Amit; Kaur, Maninder; Pandey, Shilpi; Kumar, Prem; Kumar, Dinesh; Rangra, Kamaljit

doi:10.1117/1.jmm.13.1.013005

Cited by 16 publications

(2 citation statements)

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“…Packaging contributes to about 75% of the total cost of a device [1] and the performance and reliability of a device strongly depend on its packaging. The diverse nature of MEMS devices also makes it mandatory to customize the packaging to the specific requirements of devices and applications, with emphasis on the cost, performance, and reliability [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…It also results in longer signal lines and larger wafer area consumption. Depending upon the electrical connection approach, the vertical packaging can further be subdivided as top contact packaging (TCP, the conventional approach) [11][12][13][14][15] and bottom contact packaging (BCP) as shown in Figures 2(b) and (c) respectively. In vertical packaging, connections are provided either through the cap or device wafer in a direction perpendicular to the wafer and no lateral extension is required, thus saving the wafer area.…”

Section: Introductionmentioning

confidence: 99%

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Comparison of Packaging Technologies for Rf Mems Switch

Bansal¹,

Kumar²,

Kumar³

et al. 2014

PIER M

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The present paper describes an integrated approach for design, fabrication and encapsulation of RF MEMS switches in view of the optimal performance subsequent to packaging. 'Top and bottom contact' fabrication approaches are explored using different RF MEMS switch topologies. In the 'bottom contact package (BCP)' the packaging cap alignment is less critical as compared to the top contact packaging (TCP) approach where contact via is an integral part of the cap. In this case, the connection layout through silicon via holes is independent of the cavity geometry. For the devices under consideration, bulk etched silicon cavity height has been optimized to 50 µm for optimal RF performance, e.g., isolation and insertion loss. Parasitic effects of top silicon cap are reduced by altering CPW impedance. Mechanical parameter damping is simulated for different cavity heights and found to be independent from cavity height after 20 µm onwards.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Comparison of Packaging Technologies for Rf Mems Switch

Bansal¹,

Kumar²,

Kumar³

et al. 2014

PIER M

Self Cite

View full text Add to dashboard Cite

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Capacitive Pressure Sensors

Nie

Bao

Huang

2015

Wiley Encyclopedia of Electrical and Electronics Engineering

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This article addresses the principles, structure, measurement, fabrication, and packaging of capacitive pressure sensors. Because micromachined technologies have been widely used in the processing of sensors, particular focus is placed on silicon capacitive pressure sensors. Three different general approaches are introduced and compared in which the response of the sensor is due to the change of the spacing, area, and dielectric permittivity under pressure. Two methods to realize the front‐end circuitry, sensing of the capacitive sensor with AC modulation (continuous‐time approach) and switched capacitor interfaces, are then discussed. The fabrication processes such as bulk silicon micromachining, surface micromachining, and monolithic integration with circuits are presented and compared. The packaging for the sensors is discussed. Recently, other materials have been considered for capacitive pressure sensors because of their excellent performance in different application fields. The progress of emerging technologies and materials is introduced and compared. Finally, the applications of capacitive pressure sensors are briefly introduced.

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