2017
DOI: 10.1016/j.solener.2017.08.023
|View full text |Cite
|
Sign up to set email alerts
|

Comparative study of GaAs and CdTe solar cell performance under low-intensity light irradiance

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
27
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 32 publications
(27 citation statements)
references
References 36 publications
0
27
0
Order By: Relevance
“…CIGS studies under low-light conditions have shown the devices tested suffered from low shunt resistance that significantly reduced their efficiency as light intensity decreases [31]. CdTe, however, has a bandgap of 1.5 eV and is known to maintain high performance under diffuse radiation and low light [33]. Over the years, the technology itself has established a strong foothold in the PV market and is well characterized.…”
Section: The Expected Market For Indoor Photovoltaicsmentioning
confidence: 99%
“…CIGS studies under low-light conditions have shown the devices tested suffered from low shunt resistance that significantly reduced their efficiency as light intensity decreases [31]. CdTe, however, has a bandgap of 1.5 eV and is known to maintain high performance under diffuse radiation and low light [33]. Over the years, the technology itself has established a strong foothold in the PV market and is well characterized.…”
Section: The Expected Market For Indoor Photovoltaicsmentioning
confidence: 99%
“…In terms of the ratio of absorption to emission, which represents the light generated current density to the reverse saturation current (Isc/Io) in Equation ( 2), the Voc increases logarithmically either by increasing Isc or decreasing Io [45]. Since the TPV cells usually operate at high illumination intensity [22], [26], the Isc is always significantly larger than Io. Therefore, increasing the illumination intensity will eventually increase Voc performance.…”
Section: A the Jv Curves Of The Ge And Ingaas Tpv Cells Under Differementioning
confidence: 99%
“…Different illumination intensities would give a significant impact on the cell performance parameters such as Jsc, Voc, FF, η, Rs, and Rsh [26]. Tables II and III present the performance of Ge and InGaAs cells, respectively, for blackbody temperatures from 800 to 2000 K with a beam intensity of 10%.…”
Section: B Effect Of Different Spectral Irradiances On the Performancmentioning
confidence: 99%
See 1 more Smart Citation
“…Therefore, solar cells are often referred to as photovoltaic cells (PV). Electric current arises because of the photon energy of sunlight it receives successfully liberating electrons in the semiconducting relationship type N and type P to flow [14]. Just like a photodiode, this solar cell also has positive and negative legs that are connected to a circuit or device that requires an energy source [15].…”
Section: Introductionmentioning
confidence: 99%