Performance of Ge and In<sub>0.53</sub>Ga<sub>0.47</sub> as Thermophotovoltaic Cells under Different Spectral Irradiances

Gamel, Mansur Mohammed Ali; Ker, Pin Jern; Rashid, Wan Emilin Suliza Wan Abdul; Lee, Hui Jing; Hannan, M. A.; Jamaludin, M. Z.

doi:10.1109/access.2021.3062075

Cited by 15 publications

(4 citation statements)

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“…Cells tested at TPV spectrum have reported higher J sc , V oc and P max when compared to solar spectrum [ 159 , 163 , 164 ]. The increment in cell performance is related to the illumination intensity of the spectrum, which tends to be higher at TPV spectrum or concentrated solar spectrum [ 165 , 166 ]. On the other hand, lower FF , higher saturation of current density and ideality factor are reported when an InGaAs cell was tested under TPV radiation spectrum as compared to AM 1.5 spectrum.…”

Section: Ingaas-based Tpv Cellmentioning

confidence: 99%

“…The change in the radiation spectrum has a significant effect on current mechanisms of InGaAs cell, which considerably dominates the minority carriers transport process. Recently, Gamel et al [ 165 ] highlighted the effect of various spectral irradiances (different radiation temperature at different beam intensity) on the performance of TPV cell. The J sc increases linearly with illumination intensity while V oc increases logarithmically.…”

Section: Ingaas-based Tpv Cellmentioning

confidence: 99%

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A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

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Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this global issue with supplementary generation of electrical energy. This paper presents a critical review on two dominant types of semiconductor materials, namely gallium antimonide (GaSb) and indium gallium arsenide (InGaAs), as the potential candidates for TPV cells. The advantages and drawbacks of non-epitaxy and epitaxy growth methods are well-discussed based on different semiconductor materials. In addition, this paper critically examines and summarizes the electrical cell performance of TPV cells made of GaSb, InGaAs and other narrow bandgap semiconductor materials. The cell conversion efficiency improvement in terms of structural design and architectural optimization are also comprehensively analyzed and discussed. Lastly, the practical applications, current issues and challenges of TPV cells are critically reviewed and concluded with recommendations for future research. The highlighted insights of this review will contribute to the increase in effort towards development of future TPV systems with improved cell conversion efficiency.

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Section: Ingaas-based Tpv Cellmentioning

confidence: 99%

Section: Ingaas-based Tpv Cellmentioning

confidence: 99%

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

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“…The radiative and Auger recombination coefficients of In 0.83 Ga 0.17 As are taken to be 1.43 × 10 −10 cm 3 /s and 7 × 10 −27 cm 6 /s, respectively [22]. The material parameters for InP, In 0.83 Ga 0.17 As, and In 0.83 Al 0.17 As in the simulation are shown in Table 2 [23][24][25][26][27]. The material parameters for InP are assumed to be default in the Atlas module.…”

Section: Methodsmentioning

confidence: 99%

Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors

Jiao,

Guo,

Zhou

et al. 2024

Electronics

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In the planar-type InGaAs photodetector (PD) structure, a diffusion barrier has the effect of modifying the zinc diffusion profile in the interface between the cap and the absorption layer to improve device performance. In this work, an n-type In0.83Ga0.17As diffusion barrier layer (DBL) is employed between the In0.83Al0.17As cap layer and the low-doped In0.83Ga0.17As absorption layer of a lattice-mismatched metamorphic In0.83Ga0.17As PD. The device performance of the In0.83Ga0.17As PDs in terms of dark current, quantum efficiency, and capacitance were simulated and compared to experimental results. The effects of the thickness and doping concentration of the DBL on PD performance were analyzed and shown to be optimized at both 300 K and 200 K. Based on the simulation results, the electron concentration of the DBL is recommended to be 3×1016–5×1016 cm−3 and a thickness of 0.1 μm is suggested.

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“…Basically, programs are divided into codes and tools that simulate materials and devices. Lumerical TCAD [3], Sentaurus TCAD [4] and Silvaco TCAD [5] programs are widely used in the simulation of semiconductor devices. These programs have the ability to simulate in 3D and 2D dimensions.…”

Section: Introductionmentioning

confidence: 99%

Suntulip: New Tool to Simulate Solar Cells

Gulomov,

Accouche,

Neji

et al. 2023

IEEE Access

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The article underscores the role of simulation in solar cell research, focusing on the newlydeveloped solar cell simulation program, Suntulip, which was written in C#. Given, the escalating significance of solar energy, optimizing solar cell efficiency and reducing costs has become vital for sustainability. Simulation has proven to be extremely efficient and cost-effective method compared to experimental and theoretical approaches. The introduction of Suntulip addresses the lack of a simulation library in C# and its potential contribution to solar cell research. Notably, the program's reliability is substantiated through optical simulations and a comparison with Wafer Ray Tracer, demonstrating accurate and consistent results. The article emphasizes Suntulip's user-friendly interface and versatile capabilities in calculating reflection, transmission, and absorption coefficients, hence providing valuable insights into solar cell behavior. As Suntulip continues to demonstrate its accuracy, it holds promises in advancing solar cell technology and facilitating sustainable energy solutions.

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Performance of Ge and In_0.53Ga_0.47 as Thermophotovoltaic Cells under Different Spectral Irradiances

Abstract: The authors gratefully acknowledge the Tenaga Nasional Berhad (TNB) seeding fund (Project code: U-TG-RD-18-04) that is managed by UNITEN R&D Sdn. Bhd. and the BOLD Refresh Publication Fund 2021 (J5100D4103).

Cited by 15 publications

References 62 publications

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors

Suntulip: New Tool to Simulate Solar Cells

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Performance of Ge and In0.53Ga0.47 as Thermophotovoltaic Cells under Different Spectral Irradiances

Abstract: The authors gratefully acknowledge the Tenaga Nasional Berhad (TNB) seeding fund (Project code: U-TG-RD-18-04) that is managed by UNITEN R&D Sdn. Bhd. and the BOLD Refresh Publication Fund 2021 (J5100D4103).

Cited by 15 publications

References 62 publications

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors

Suntulip: New Tool to Simulate Solar Cells

Contact Info

Product

Resources

About

Performance of Ge and In_0.53Ga_0.47 as Thermophotovoltaic Cells under Different Spectral Irradiances