Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics

Huang, Yaren; Wachutka, G.

doi:10.1109/sispad.2016.7605161

Cited by 9 publications

(6 citation statements)

References 6 publications

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“…Therefore, the surge current capability of the MPS diode is weakened. For the P+ ohmic contact process, an additional metal layer is always added into the process flow of the MPS diode in the traditional fabrication method [ 12 , 13 ]. The additional metal process and the ohmic contact annealing process increase the complexity and fabrication cost.…”

Section: Introductionmentioning

confidence: 99%

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

Ren

et al. 2021

Materials

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This paper demonstrated the impact of process conditions on the surge current capability of 1.2 kV SiC junction barrier Schottky diode (JBS) and merged PiN Schottky diode (MPS). The influence of ohmic contact and defect density produced by implantation was studied in the simulation. The device fabricated with high temperature implantation had less defect density in the implant region compared with room temperature implantation, which contributed to higher hole injection in surge current mode and 20% surge capability improvement. In addition, with lower P+ ohmic contact resistance, the device had higher surge capability. When compared to device fabrication with a single Schottky metal layer in the device active area, adding additional P+ ohmic contact on top of the P+ regions in the device active area resulted in the pn junctions sharing a greater portion of surge current, and improved the devices’ surge capability by ~10%.

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Section: Introductionmentioning

confidence: 99%

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

Ren

et al. 2021

Materials

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“…At this time, the device works in the bipolar operating mode. [10][11][12][13][14] This study proposes a novel layout design to improve the surge capability of 4H-SiC MPS diodes and uses Silvaco technology computer-aided design (TCAD) software to perform three-dimensional (3D) electro-thermal simulations of the device. The results show that by designing a continuous P+ surface (CPS), the bipolar on-voltage of the MPS diode can be reduced so that it enters the bipolar operating mode earlier during the surge process.…”

Section: Introductionmentioning

confidence: 99%

Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness

Chen

Wang

Fei³

et al. 2023

Chinese Phys. B

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In this work, a method to improve the surge current capability of silicon carbide (SiC) merged PiN Schottky (MPS) diodes is presented and investigated via three-dimensional electro-thermal simulations. When compared with conventional MPS diodes, the proposed structure has a more uniform current distribution during bipolar conduction due to the help of the continuous P+ surface, which can avoid the formation of local hot spots during the surge process. The Silvaco simulation results show that the proposed structure has a 20.29% higher surge capability and a 15.06% higher surge energy compared with conventional MPS diodes. The bipolar on-state voltage of the proposed structure is 4.69 V, which is 56.29% lower than that of conventional MPS diodes, enabling the device to enter the bipolar mode earlier during the surge process. Furthermore, the proposed structure can suppress the occurrence of “snapback” phenomena when switching from the unipolar the bipolar operation mode. In addition, the analysis of the surge process of MPS diodes is carried out in detail.

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“…The 4H-SiC merged P-I-N Schottky (MPS) diode is a promising device by integrating the Schottky and PN junction into one chip, which realizes the superior breakdown performance and fast reverse recover characteristics. [10][11][12][13][14] However, an undesirable snapback effect is induced by the short effect of the Schottky junction at the forward conduction, which can prevent the device from implementing full turn-on, thereby leading to unreliability for the power systems. Many advanced structures have been proposed to solve the snapback in recent years.…”

Section: Introductionmentioning

confidence: 99%

A 4H-SiC merged P–I–N Schottky with floating back-to-back diode

Chen¹,

Qin²,

Xu³

et al. 2022

Chinese Phys. B

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A novel 4H-SiC merged P–I–N Schottky (MPS) with floating back-to-back diode (FBD), named FBD-MPS, is proposed and investigated by the Sentaurus technology computer-aided design (TCAD) and analytical model. The FBD features a trench oxide and floating P-shield, which is inserted between the P+/N– (PN) junction and Schottky junction to eliminate the shorted anode effect. The FBD is formed by the N-drift/P-shield/N-drift and it separates the PN and Schottky active region independently. The FBD reduces not only the V turn to suppress the snapback effect but also the V on at bipolar operation. The results show that the snapback can be completely eliminated, and the maximum electric field (E max) is shifted from the Schottky junction to the FBD in the breakdown state.

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Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics

Cited by 9 publications

References 6 publications

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness

A 4H-SiC merged P–I–N Schottky with floating back-to-back diode

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