Abstract:In this work, a method to improve the surge current capability of silicon carbide (SiC) merged PiN Schottky (MPS) diodes is presented and investigated via three-dimensional electro-thermal simulations. When compared with conventional MPS diodes, the proposed structure has a more uniform current distribution during bipolar conduction due to the help of the continuous P+ surface, which can avoid the formation of local hot spots during the surge process. The Silvaco simulation results show that the proposed struc… Show more
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