Comparative Study Between Partially and Fully Recessed‐Gate Enhancement‐Mode AlGaN/GaN MIS HEMT on the Breakdown Mechanism

He, Yunlong; Gao, Hao; Wang, Chong; Zhao, Yaopeng; Lü, Xiaoli; Zhang, Chunfu; Zheng, Xuefeng; Guo, Lixin; Ma, Xiaohua

doi:10.1002/pssa.201900115

Cited by 15 publications

(11 citation statements)

References 30 publications

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“…Consequently, the polarization effect of the heterojunction becomes weaker, which results in the decrease of 2DEG concentration. [ 18 ] Therefore, the 2DEG under the anode contact is easier to deplete in the RA‐SBDs, which induces the depletion region to expand broader than the C‐SBDs at the same V anode horizontally. [ 18 ] However, due to the distance between the GaN buffer and anode becoming shorter in the RA‐SBDs, the value of the electric field peak at the anode edge is higher than that of the C‐SBDs at the same V anode .…”

Section: Resultsmentioning

confidence: 99%

“…[ 18 ] Therefore, the 2DEG under the anode contact is easier to deplete in the RA‐SBDs, which induces the depletion region to expand broader than the C‐SBDs at the same V anode horizontally. [ 18 ] However, due to the distance between the GaN buffer and anode becoming shorter in the RA‐SBDs, the value of the electric field peak at the anode edge is higher than that of the C‐SBDs at the same V anode . This leads to the breakdown occurring at the lower V anode and limits the depletion region expanding simultaneously.…”

Section: Resultsmentioning

confidence: 99%

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The Influence of Recessed Floating Metal Rings Structure on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes

Deng

Wang

et al. 2021

Physica Status Solidi (a)

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AlGaN/GaN lateral Schottky barrier diodes (SBDs) with the nonrecessed and recessed floating metal rings (FMR) structure are fabricated and electrically characterized to study the influence of recessed FMR structure. The recessed FMR SBDs (RFMR‐SBDs) exhibit the lower onset voltage (V ON) and higher forward current (I F) at the anode of 3 V than the nonrecessed FMR SBDs (FMR‐SBDs). More importantly, the breakdown voltage (V BR) of the RFMR‐SBDs is 1980 V, which has a significant improvement compared with the FMR‐SBDs of 1540 V. However, the specific on‐resistance of the RFMR‐SBDs is higher than FMR‐SBDs. Furthermore, the electric field distributions of different structures are simulated by Silvaco software to analyze the mechanism of improving breakdown voltage. The results show that the breakdown voltage improvement is due to the broader depletion region in the RFMR‐SBDs at the breakdown voltage. Moreover, the electric field distributions of the RFMR‐SBDs and FMR‐SBDs with three FMRs are discussed further.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

The Influence of Recessed Floating Metal Rings Structure on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes

Deng

Wang

et al. 2021

Physica Status Solidi (a)

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“…In order to change the mobility values of the devices, the FAT-FETs are tested by measuring I-V and C-V characteristics. The gate width (W G ) is 100 µm, the gate length (L G ) is 50 µm, and the V d is 0.1 V. [21] As the device is biased in the linear range, the channel drift mobility can be expressed by…”

Section: Resultsmentioning

confidence: 99%

Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators*

et al. 2020

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Two types of enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with different gate insulators are fabricated on Si substrates. The HfO2 gate insulator and the Al2O3 gate insulator each with a thickness of 30 nm are grown by the plasma-enhanced atomic layer deposition (PEALD). The energy band diagrams of two types of dielectric MIS-HEMTs are compared. The breakdown voltage (V BR) of HfO2 dielectric layer and Al2O3 dielectric layer are 9.4 V and 15.9 V, respectively. With the same barrier thickness, the transconductance of MIS-HEMT with HfO2 is larger. The threshold voltage (V th) of the HfO2 and Al2O3 MIS-HEMT are 2.0 V and 2.4 V, respectively, when the barrier layer thickness is 0 nm. The C–V characteristics are in good agreement with the V th’s transfer characteristics. As the barrier layer becomes thinner, the drain current density decreases sharply. Due to the dielectric/AlGaN interface is very close to the channel, the scattering of interface states will lead the electron mobility to decrease. The current collapse and the R on of Al2O3 MIS-HEMT are smaller at the maximum gate voltage. As Al2O3 has excellent thermal stability and chemical stability, the interface state density of Al2O3/AlGaN is less than that of HfO2/AlGaN.

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“…[ 49,50 ] As a result, the V th and R on of the MIS‐FET are both higher than the MIS‐HEMT structure. [ 51,52 ]…”

Section: Gan‐based Hemt Power Device Structures—normally‐on and Normamentioning

confidence: 99%

Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

113

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The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.

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Comparative Study Between Partially and Fully Recessed‐Gate Enhancement‐Mode AlGaN/GaN MIS HEMT on the Breakdown Mechanism

Cited by 15 publications

References 30 publications

The Influence of Recessed Floating Metal Rings Structure on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes

The Influence of Recessed Floating Metal Rings Structure on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes

Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators*

Recent Advances in GaN‐Based Power HEMT Devices

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Comparative Study Between Partially and Fully Recessed‐Gate Enhancement‐Mode AlGaN/GaN MIS HEMT on the Breakdown Mechanism

Cited by 15 publications

References 30 publications

The Influence of Recessed Floating Metal Rings Structure on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes

The Influence of Recessed Floating Metal Rings Structure on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes

Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators*

Recent Advances in GaN‐Based Power HEMT Devices

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Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators*