Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors

Hwang, Do Kyung; Lee, Kimoon; Kim, Jae-Hoon; Im, Seongil; Park, Ji Hoon; Kim, Eugene

doi:10.1063/1.2345243

Cited by 134 publications

(98 citation statements)

References 16 publications

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“…This type of small V T shift may be attributed to the expulsion of interface trapped electrons, which are regarded as still remaining at the pentacene/dielectric interface in a small density. [25][26][27][28] For the transparent ZnO TFT, the saturation field-effect mobility was 0.21 cm 2 V À1 s À1 and its V T was 0.2 V. In the case of our top-gate ZnO TFT, no hysteresis and no V T shift were observed at all, which is very impressive compared to the results from our previous bottom-gate ZnO TFT. [14] When the same transfer curves for the two TFT devices are displayed as I D (logarithmic scale) versus V G plots in Figure 4c and d, the on/off current ratios of the pentacene and ZnO TFTs are 2 Â 10 5 and 2.7 Â 10 3 , respectively, with subthreshold swing (S.S. ¼ dV G /dlog 10 I D ) values of 0.22 and 0.58 V decade À1 , respectively.…”

Section: Channelsupporting

confidence: 59%

Transparent Photo‐Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric Layer

Lee

et al. 2009

Adv Funct Materials

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Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide‐based thin‐film transistors (TFTs) on glass and plastic substrates. However, work in transparent electronics has been limited mostly to high‐voltage devices operating at more than a few tens of volts, and has mainly focused on transparent display drivers. Low‐voltage logic devices, such as transparent complementary inverters, operating in an electrically stable and photo‐stable manner, are now very necessary to practically realize transparent electronics. Electrically stable dielectrics with high strength and high capacitance must also be proposed to support this mission, and simultaneously these dielectrics must be compatible with both n‐ and p‐channel TFTs in device fabrication. Here, a nanohybrid dielectric layer that is composed of multiple units of inorganic oxide and organic self‐assembled monolayer is proposel to support a transparent complementary TFT inverter operating at 3 V.

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Section: Channelsupporting

confidence: 59%

Transparent Photo‐Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric Layer

Lee

et al. 2009

Adv Funct Materials

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“…[60] We have also seen above that strong hysteresis effects are commonly observed with polar gate dielectrics such as PVP [61] or PVA, which are hygroscopic and prone to containing a significant concentration of ions. The hysteresis effects can be reduced by careful crosslinking [62,63] or by inserting an inorganic-barrier layer in contact with the gate electrode. [61,64,65] As discussed above, specific functional groups on the surface of the gate dielectric can trap charges in the organic semiconductor, as in the case of electron trapping in silanol groups or hole trapping in water-related defect states on SiO 2 .…”

Section: Influence Of Gate Dielectric and Source-drain Contactsmentioning

confidence: 99%

Reliability of Organic Field‐Effect Transistors

2009

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In this article, we review current understanding of the reliability of organic field‐effect transistors, with a particular focus on degradation of device characteristics under bias stress conditions. We discuss the various factors that have been found to influence the operational stability of different material systems, including dependence on stress voltage and duty cycle, gate dielectric, environmental conditions, light exposure, and contact resistance. A key question concerns the role of extrinsic factors, such as oxidation or presence of moisture, and that of intrinsic factors, such as the inherent structural and electronic disorder that is present in thin organic semiconductor films. We also review current understanding of the microscopic defects that could play a role in charge trapping in organic semiconductors.

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“…It has been demonstrated that precursor groups (Si-N, Si-H) remaining after conversion and hydroxyl groups on the SiO 2 surface lead to the presence of hysteresis. [30][31][32][33] On the basis of the IR results shown in Fig. 4, we suggest that the hysteresis in the J vs E curves for CAPS and 20 W OCAPS is attributed to incomplete reaction of the PHPS precursor, and that hydroxyl groups generated after plasma treatment introduce hysteresis for 80 W OCAPS films.…”

Section: Morphology and Chemistry Of The Gate Insulatormentioning

confidence: 99%

Optimization of a Solution-Processed SiO₂ Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

Jeong

Pearson

Kim

et al. 2016

ACS Appl. Mater. Interfaces

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Further information on publisher's website:http://dx.doi.org/10.1021/acsami.5b10520 Publisher's copyright statement: This document is the Accepted Manuscript version of a Published Work that appeared in nal form in ACS Applied Materials and Interfaces, copyright c American Chemical Society after peer review and technical editing by the publisher. To access the nal edited and published work see http://dx.doi.org/10.1021/acsami.5b10520. Additional information:Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

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Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors

Cited by 134 publications

References 16 publications

Transparent Photo‐Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric Layer

Transparent Photo‐Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric Layer

Reliability of Organic Field‐Effect Transistors

Optimization of a Solution-Processed SiO₂ Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

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Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors

Cited by 134 publications

References 16 publications

Transparent Photo‐Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric Layer

Transparent Photo‐Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric Layer

Reliability of Organic Field‐Effect Transistors

Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

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Product

Resources

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Optimization of a Solution-Processed SiO₂ Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors