Reliability of Organic Field‐Effect Transistors

Sirringhaus, Henning

doi:10.1002/adma.200901136

Cited by 571 publications

(549 citation statements)

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“…1,2 However, their operational instability is seriously impeding widespread commercial introduction. 3,4 The instability under application of a prolonged gate bias is due to a shift of the threshold voltage with time, leading to a decreasing source-drain current and finally to a disfunctioning of the transistors. This highly undesirable effect is referred to as the "bias-stress effect" and the identification of its origin is of paramount importance.…”

Section: Proton Migration Mechanism For the Instability Of Organic Fimentioning

confidence: 99%

Proton migration mechanism for the instability of organic field-effect transistors

Sharma

Mathijssen

Kemerink

et al. 2009

Applied Physics Letters

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During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p-type transistors with a silicon-dioxide gate dielectric, based on hole-assisted production of protons in the accumulation layer and their subsequent migration into the gate dielectric. This model explains the much debated role of water and several other hitherto unexplained aspects of the instability of these transistors.

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Section: Proton Migration Mechanism For the Instability Of Organic Fimentioning

confidence: 99%

Proton migration mechanism for the instability of organic field-effect transistors

Sharma

Mathijssen

Kemerink

et al. 2009

Applied Physics Letters

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“…This electrical instability is manifested as a shift of the threshold voltage-the gate bias voltage at which a transistor switches on-with time. 3,4 This undesirable effect is usually referred to as the "bias-stress effect." The identification of its origin is of paramount importance for the development of commercially viable OFETs.…”

Section: Introductionmentioning

confidence: 99%

Proton migration mechanism for operational instabilities in organic field-effect transistors

et al. 2010

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. (2010). Proton migration mechanism for operational instabilities in organic field-effect transistors. Physical Review B, 82(7), 075322-1/11. [075322]. DOI: 10.1103/PhysRevB.82.075322 DOI:10.1103/PhysRevB.82.075322 Document status and date:Published: 01/01/2010 Document Version:Publisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: Organic field-effect transistors exhibit operational instabilities involving a shift of the threshold gate voltage when a gate bias is applied. For a constant gate bias the threshold voltage shifts toward the applied gate bias voltage, an effect known as the bias-stress effect. Here, we report on a detailed experimental and theoretical study of operational instabilities in p-type transistors with silicon-dioxide gate dielectric both for a constant as well as for a dynamic gate bias. We associate the instabilities with a reversible reaction in the organic semiconductor in which holes are converted into protons in the presence of water and a reversible migration of these protons into the gate dielectric. We show how redistribution of charge between holes in the semiconductor and protons in the gate dielectric can consistently explain the experimental observations. Furthermore, we show how a shorter period of application of a gate bias leads to a faster backward shift of the threshold voltage when the gate bias is removed. The proposed mechanism is consistent with the observed acceleration of the bias-stress effect with increasing humidity, increasing temperature, and increasing energy of the highest molecular orbital of the org...

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“…Electron transport has been previously suggested to be sensitive to extrinsic electronegative impurities such as hydroxyl groups (moisture) and oxygen. 8,9 Tiny amount of impurities can exist in the semiconducting polymer and/or the solvent from synthetic residues or the fabrication process. Annealing the polymer films above its melting point under nitrogen may help to remove physically or chemically attached impurities and residue solvent and thus improves electron mobility.…”

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Silaindacenodithiophene Semiconducting Polymers for Efficient Solar Cells and High-Mobility Ambipolar Transistors

et al. 2010

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Reliability of Organic Field‐Effect Transistors

Cited by 571 publications

References 97 publications

Proton migration mechanism for the instability of organic field-effect transistors

Proton migration mechanism for the instability of organic field-effect transistors

Proton migration mechanism for operational instabilities in organic field-effect transistors

Silaindacenodithiophene Semiconducting Polymers for Efficient Solar Cells and High-Mobility Ambipolar Transistors

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