Comparative Photoemission Study of the CuInC Chalcopyrite Compounds

Abstract

Comparative Photoemission Study of the CuInC:' Chalcopyrite CompoundsIn honour of Professor em. 0. BRUMMERS' 70th birthday Photoemission spectra of all CuInC;' chalcopyrite compounds are measured at He1 line excitation and of CuTnSz also at excitation with ZrMr radiation. It is found that the 1x15s -chalcogen p bonding states shift to lower binding energies with increasing anion mass. The energetic position of the S3s band of CuInS, is also determined. The experimental results obtained are compared with previous measurements and with theoretical band structure calculations.Photoemissionsspektren aller CuInC;' -Chalkopyritverbindungen wurden bei HeI-Anregung und von CuInS, auch bei Anregung mit ZrMC-Strahlung gemessen. Es zeigt sich, daB sich die 1115s-Chalkogen p-Bindungszustande mit steigender Anionenmasse nach kleineren Bindungsenergien verschieben. Die energetische Lage des S3s-Bandes im CuInS, wurde ebenfalls bestimmt. Die erhaltenen experimentellen Ergebnisse werden mit friiheren Messungen und mit theoretischen Bandstrukturberechnungen verglichen.

XPS Analysis of Bridgman‐grown CuInTe2 and of its Native Oxide

“…As a first step in this direction we used X-ray excited photoelectron spectroscopy (XPS) to investigate CuInTe2 single crystals. Photoelectron spectroscopy has already been employed in some previous studies of CuInTez but the emphasis of these investigations was on the valence band structure of the compound (NEUMANN et al 1984;SOMMER et al;TAKARABE et al). On the other hand, this experimental method has been successfully exploited to follow the influence of various surface treatments on the near-surface properties of CuInSez (CAHEN et al;KAZMERSKI et al 1981KAZMERSKI et al , 1983NELSON et al;SANDER et al;ZURCHER et al) and thus can be expected to give valuable complementary information on the near-surface characteristics of CuInTe;!…”

Electronic modification of Cu-based chalcopyrite semiconductors induced by lattice deformation and composition alchemy

“…More than that, their capabilities to accommodate different dopants [5,6] are of great importance. The structural effect on optical band gaps of ternary Cu-based A I B III C VI 2 compounds has been extensively studied experimentally and theoretically [7][8][9][10][11][12][13][14][15]. One way is to calculate the band-gap pressure coefficient defined as α = dE g /dP = −dE g /Bd ln V , where B is the bulk modulus and V is the volume of the unit cell.…”

Partial density of states in the CuInSe2 valence bands

“…1 A number of experimental and theoretical studies has therefore been undertaken to derive the partial density of noble metal d states at the top of the valence bands. [1][2][3][4][5] The experimental and theoretical results, however, do not agree; for example in CuInS 2 Cu 3d contributions of 45% ͑elec-troreflectance͒ and 60% ͑photoemission͒ were found experimentally and contrasted 24% from the band structure calculation. Respective data for CuInSe 2 are 34% ͑electro-reflectance͒ and 22% ͑band structure calculation͒.…”