Comparative investigation of low-power ferroelectric material embedded with different heterojunction vertical TFET structures

Singh, Sourav

doi:10.1007/s10854-022-08666-z

Cited by 3 publications

(2 citation statements)

References 32 publications

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“…However, there is still room, for exploration in this field. One avenue to consider is analyzing biomolecules that have low dielectric constants, such, as Uricase (1.54) streptavidin (2.1), protein (2.50), ChOx (3.30), and APTES (3.57) [11,23,25,26]. This expansion of research will contribute to an understanding of the capabilities of the biosensor.…”

Section: Discussionmentioning

confidence: 99%

“…Compared to conventional MOSFET-based biosensors, our JF-ED-VTFET biosensor has benefits such as lower power consumption, lower leakage current, quicker operation, and enhanced subthreshold swing. The performance of Tunnel Field Effect Transistors (TFETs) has been significantly enhanced using a variety of techniques, such as the use of high-k materials, hetero and compound materials, and vertical TFET layouts [22][23][24][25][26]. For applications that require higher performance but lower power consumption, TFETs are considered as the optimal choice due to their superior subthreshold properties, reduced leakage, increased ON current, scalability and compatibility with 3D integration [27][28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

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Insights into the design principles of JF-ED-VTFET for biosensing application

Singh,

Agnihotri,

Tewari

et al. 2024

Phys. Scr.

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In this research article, we have designed a junction-free electrostatically doped vertical tunnel field-effect transistor (JF-ED-VTEFT) for label-free biosensing applications. We incorporated a nano-cavity within the gate-oxide layer near the source end of the FET to enable the detection of biomolecules based on the principle of dielectric modulation and without the requirement of external labeling. The proposed biosensor is thoroughly analyzed, considering various aspects such as electric field, energy band, transfer characteristics, and sensitivity parameters including energy band diagram, ON-current, ION/IOFF ratio, electrical analysis, and surface potential characteristics. The investigation of sensitivity encompasses practical challenges, such as different filling factors and step-profiles resulting from steric hindrance. Moreover, the impact of temperature variations and nano-cavity dimensions on the performance of the biosensor is assessed. To evaluate the effectiveness of the biosensor, representative biomolecules are considered for performance assessment, providing insights into the capacity of the biosensor in detecting and analyzing these molecules.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Insights into the design principles of JF-ED-VTFET for biosensing application

Singh,

Agnihotri,

Tewari

et al. 2024

Phys. Scr.

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Synergistic Effect of Ferroelectric and HfO₂/SiO₂ Hetero dielectrics in Junctionless FET for Analog and RF Applications

Singh,

Chauhan,

Yadava

2024

Advcd Theory and Sims

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The synergistic effect of ferroelectric and HfO2/SiO2 (Hafnium dioxide/ Silicon dioxide) hetero dielectrics in double gate Junctionless Field Effect Transistor is investigated using TCAD Tool. The study encompasses a wide range of parameters, allowing for a detailed examination of the impact of hysteresis on the overall functionality of the double gate Junctionless FET. One crucial aspect of the investigation involves examining the analog and RF performance of the device. The high transconductance (gm) of 5.42 mS, a gain of 95 dB (decibel), a cut‐off frequency of 553.9 GHz (gigahertz), a gain transconductance frequency product (GTFP) of 50.9 THz (terahertz), and a gain bandwidth product (GBW) of 188 GHz shows its great potential for analog and RF signal processing applications as well as for other high data rate wireless applications such as Machine Learning (ML), Artificial Intelligence (AI) and Internet‐of‐Thing (IoT). The low transit time of 17 ns (nano second), with high ION/IOFF ratio range of 107 shows that the device has good switching behavior also. This aspect of the research aims to unveil the device's viability for analog and high‐frequency applications, contributing valuable insights to the emerging electronic technologies field.

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Design and Performance Analysis of Negative Capacitance Effect in the Charge Plasma-Based Junction-Less Vertical TFET Structure

Singh¹,

Singh

2023

NANO

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In this paper, a negative capacitance (NC) effect in series with normal oxide capacitance is first time introduced to design negative capacitance charge plasma-based junction less vertical TFET structure (NC-CP-JL-VTFET). The introduced negative capacitance enhances the overall gate capacitance and hence gate capacitive coupling and thus renders high current capabilities with reduced sub-threshold slope and threshold voltage. With the use of negative capacitance along with oxide capacitance, it has been seen that the same drain current is achieved at lower gate voltage as compared to without use of negative capacitance and since the voltage scaling is done considerably, the dynamic power dissipation in circuit application can be reduced significantly. To generate the negative capacitance during the device operation; ferroelectric material [Formula: see text](VDF-TrFE) poly(vinylidene fluoride-trifluoro ethylene) is used in stack with SiO2 gate oxide. Various performance parameters of the designed structure such as electron–hole concentration in the tunneling junction, electric field, surface potential, electron–hole quasi-Fermi variation, and drain current variation are investigated and compared with the results of without considering the ferroelectric material in the gate oxide. The variation of the ferroelectric thickness on the device performance is also investigated. The investigation exhibits significant improvement in the drain current and in the other parameters as well. These improvements are seen because of higher capacitive coupling and these effects are further responsible for more energy band bending which in turn govern high electron tunneling. Due to the existence of negative capacitance, the peak value of the electric field gets doubled while the surface potential increases 44% from the normal structure.

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Comparative investigation of low-power ferroelectric material embedded with different heterojunction vertical TFET structures

Cited by 3 publications

References 32 publications

Insights into the design principles of JF-ED-VTFET for biosensing application

Insights into the design principles of JF-ED-VTFET for biosensing application

Synergistic Effect of Ferroelectric and HfO₂/SiO₂ Hetero dielectrics in Junctionless FET for Analog and RF Applications

Design and Performance Analysis of Negative Capacitance Effect in the Charge Plasma-Based Junction-Less Vertical TFET Structure

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Comparative investigation of low-power ferroelectric material embedded with different heterojunction vertical TFET structures

Cited by 3 publications

References 32 publications

Insights into the design principles of JF-ED-VTFET for biosensing application

Insights into the design principles of JF-ED-VTFET for biosensing application

Synergistic Effect of Ferroelectric and HfO2/SiO2 Hetero dielectrics in Junctionless FET for Analog and RF Applications

Design and Performance Analysis of Negative Capacitance Effect in the Charge Plasma-Based Junction-Less Vertical TFET Structure

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Synergistic Effect of Ferroelectric and HfO₂/SiO₂ Hetero dielectrics in Junctionless FET for Analog and RF Applications