Compact representation of temperature and power dependence of thermal resistance in Si, Inp and GaAs substrate devices using linear models

An approach for determining thermal resistance model parameters of SiGe HBT

“…In fact, the negligible change in k of copper (from 300 to 600 K) can be ignored to presume a temperature-independent k m . 14,17 Therefore, the temperature dependent k can be modeled as follows 18 :…”

Electro-Thermal Model for Multi-Anode Schottky Diode Multipliers

“…This approach of temperature-dependent thermal resistance treatment is proposed in the transistor electro-thermal model [14], [15]. Based on this single diode electro-thermal model, the model is then further extended to the multi-anode case.…”

“…A diode model incorporating the thermal effects on the electrical performance is needed during the circuit design stage. To-date, reports on thermal analysis and electrothermal modeling of transistors [13][14][15][16][17][18][19] are abundant. Similar effort has also been performed on diodes, such as the heterostructure barrier varactor (HBV) [20][21][22] and transferred electron devices (TED) [23].…”

Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

“…Moreover, in a linear approximation, the superposition principle holds and therefore the temperature consists of the self-heating term and mutual thermal coupling term . However, since the systems of devices under consideration are composed of silicon and/or other semiconductor and dielectric materials, which have temperature-dependent thermal conductivities [37], the thermal impedance coefficients are not constant with temperature [38]. Thus, the linearity principles used in (1) do not hold in general, but even in the case of large-signal excitations, for which large temperature changes can be generated within the system, it is often still useful to adopt the small-signal compact models of the thermal impedance network, and this is done in almost all practical cases.…”

“…Thus, the linearity principles used in (1) do not hold in general, but even in the case of large-signal excitations, for which large temperature changes can be generated within the system, it is often still useful to adopt the small-signal compact models of the thermal impedance network, and this is done in almost all practical cases. A few attempts to include nonlinearity in the analytical thermal resistance/impedance models have been reported in the literature [38], [39], but such models are very complex and even for bulk technologies they have much less practical value than linear models. An alternative approach in nonlinear thermal impedance modeling is the database (or look-up table) modeling method based on measured small-signal thermal impedance data.…”