Compact Models for Integrated Circuit Design

Saha, Samar K.

doi:10.1201/b19117

Cited by 17 publications

(34 citation statements)

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“…As the scaling of CMOS technology continues, the threedimensional (3-D) FinFET became a feasible alternative to the traditional single gate devices. The invention of FinFET has enabled the continued advancement of electronics industry and is of immense interest for sub-20 nm applications [1], [2]. The fin based devices are excellent in suppressing the short channel effects (SCEs) and have superior control over the carriers in the channel [3]- [7].…”

Section: Introductionmentioning

confidence: 99%

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3-D TCAD Assessment of Fin-Based Hybrid Devices Under Heavy Ion Irradiation in 20-nm Technology

Pradhan

Saha

Artola

et al. 2018

IEEE Trans. Device Mater. Relib.

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In this paper, the single event transient response in nanometer hybrid FinFETs like Wavy and Symmetric Dual-k Spacer (SDS) Wavy FinFETs are systematically investigated. The novel SDS Wavy FinFETs consist of an ultra-thin body (UTB), FinFET, and spacer engineering on a single silicon-on-insulator (SOI) platform. Three-dimensional quantum simulations are used to study the heavy ion irradiation on 20 nm n-type hybrid devices. The physical insight on the post ion irradiation of the devices are carefully observed and compared with the conventional FinFETs. The effects of heavy ion irradiation on various parameters including current density, ion generation, transient current, and bipolar amplification are estimated. Furthermore, the post-ion irradiation is also examined as a function of ion characteristic time and ion-track radius.

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Section: Introductionmentioning

confidence: 99%

“…It offers many advantages like maximum area efficiency, high packing density, and high drive current as reported in [9], [11]. The channel is lightly doped to avoid random dopant fluctuation (RDF) effect [1]. The metal gate technology is used to eliminate the poly-Si gate depletion effects [26].…”

Section: Introductionmentioning

confidence: 99%

3-D TCAD Assessment of Fin-Based Hybrid Devices Under Heavy Ion Irradiation in 20-nm Technology

Pradhan

Saha

Artola

et al. 2018

IEEE Trans. Device Mater. Relib.

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“…The semiconductor industry continues to have an unprecedented impact on improving almost every aspect of modern society including communications, military, security, healthcare, energy saving, industrial automation, transport, and entertainment [1] [2]. Over the last four decades, the relentless pursuit of integrated circuit (IC) device miniaturization for manufacturing high-performance and high-density IC-chips and system-on-a-chip (SoC) led to the creation of Internet and social media [2]- [7].…”

Section: Introductionmentioning

confidence: 99%

Transitioning Semiconductor Companies Enabling Smart Environments and Integrated Ecosystems

Saha¹

2018

OJBM

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This paper discusses the business opportunities to the semiconductor companies transitioning from "pure-play" compute-focused chip providers only to complete solution providers enabling smart environments and integrated ecosystems. The semiconductor industry has led to the foundation of the Internet and Information age. The Internet enables connecting smart devices or "things" to be operated without human interactions creating Internet of Things (IoT). The IoT-enabled smart devices are being integrated into a single ecosystem with a shared user interface for healthcare, security, energy saving, automation, autonomous vehicles, telecommunications, computers, entertainment, and so on. Thus, the IoT offers semiconductor companies great business opportunities to provide IoT-enabling components for interoperability as well as system integration and software support. In this paper, the key IoT-enabling technologies and role of semiconductor companies transitioning from component suppliers only to complete IoT solution providers enabling smart environments and integrated ecosystems are discussed.

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“…The invention of 3-D FinFET technology in the semiconductor era has been considerably enabled the advancement of electronics industry and have been of immense interest for sub-20 nm applications [1,2]. The fin based devices are excellent in suppressing the short channel effects (SCEs) and have superior control over the carriers in the channel [3e7].…”

Section: Introductionmentioning

confidence: 99%

Pros and cons of symmetrical dual-k spacer technology in hybrid FinFETs

Pradhan

Andrade

Sahu

2016

Superlattices and Microstructures

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The symmetrical dual-k spacer technology in hybrid FinFETs has been widely explored for better electrostatic control of the fin-based devices in nanoscale region. Since, high-k tangible spacer materials are broadly became a matter of study due to their better immunity to the short channel effects (SCEs) in nano devices. However, the only cause that restricts the circuit designers from using high-k spacer is the unreasonable increasing fringing capacitances. This work quantitatively analyzed the benefits and drawbacks of considering two different dielectric spacer materials symmetrically in either sides of the channel for the hybrid device. From the demonstrated results, the inclusion of high-k spacer predicts an effective reduction in off-state leakage along with an improvement in drive current. However, these devices have paid the cost in terms of a high total gate-togate capacitance (C gg) that consequently results poor cutoff frequency (f T) and delay.

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Compact Models for Integrated Circuit Design

Cited by 17 publications

References 0 publications

3-D TCAD Assessment of Fin-Based Hybrid Devices Under Heavy Ion Irradiation in 20-nm Technology

3-D TCAD Assessment of Fin-Based Hybrid Devices Under Heavy Ion Irradiation in 20-nm Technology

Transitioning Semiconductor Companies Enabling Smart Environments and Integrated Ecosystems

Pros and cons of symmetrical dual-k spacer technology in hybrid FinFETs

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