Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs

Peng, Baokang; Jiao, Yanxin; Zhong, Haotian; Zhao, Ran; Wang, Zirui; Xiao, Ying; Wong, Waisum; Zhang, Lining; Wang, Runsheng; Huang, Ru

doi:10.1016/j.fmre.2022.09.035

Cited by 5 publications

(1 citation statement)

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“…Despite the recent surge in reliability research for NS devices, there remain areas and aspects where studies are either lacking or absent. Notably, this includes investigations into the TDDB reliability of substrate isolation and its impact (Figure 21) on NS reliability and thermal property [6,7,9], the effect of Tsus, which refers to the spacing between Si channels, the impact of multi-Vt and dipole processes on BTI and HCI reliability, the reliability impact from quantum confinement [6,9,64,65], reliability variability and concerns arising from the non-uniformity of thermal and electrical properties across different sheets [66], and inner spacer and top spacer reliability with different spacer materials and MOL integration schemes. These under-explored areas are critical for a more comprehensive understanding of NS reliability.…”

Section: Reliability Challenges In Ns Fets and Gaps For Future Learningmentioning

confidence: 99%

A Review of Reliability in Gate-All-Around Nanosheet Devices

Wang

2024

Micromachines

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The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFET. The introduction of a new device structure, coupled with aggressive pitch scaling, can give rise to reliability challenges. In this article, we present a review of the key reliability mechanisms in GAA NS FET, including bias temperature instability (BTI), hot carrier injection (HCI), gate oxide (Gox) time-dependent dielectric breakdown (TDDB), and middle-of-line (MOL) TDDB. We aim to not only underscore the unique reliability attributes inherent to NS architecture but also provide a holistic view of the status and prospects of NS reliability, taking into account the challenges posed by future scaling.

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