Compact, lower-power-consumption wavelength tunable laser fabricated with silicon photonic-wire waveguide micro-ring resonators

Chu, Tao; Fujioka, Nobuhide; Ishizaka, Masashige

doi:10.1364/oe.17.014063

Cited by 112 publications

(69 citation statements)

References 16 publications

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“…Wavelength tuning can be achieved via the thermo-optic effect, i.e., by heating of the MRRs, which increases the effective waveguide index and thereby the optical length of the MRRs. Further details about MRR Vernier filters can be found in [19][20][21].…”

Section: Operation Principlementioning

confidence: 99%

Spectral linewidth analysis of semiconductor hybrid lasers with feedback from an external waveguide resonator circuit

Fan¹,

Lammerink

Mak³

et al. 2017

Opt. Express

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Abstract:We present a detailed analysis of a semiconductor hybrid laser exploiting spectral control from an external photonic waveguide circuit that provides frequency-selective feedback. Based on a spatially resolved transmission line model (TLM), we have investigated the output power, emission frequency, and the laser spectral linewidth. We find that, if the feedback becomes weaker, the spectral linewidth is larger than predicted by previous models that are based on a modified mean-field approximation, even if these take a strong spatial variation of the gain into account. The observed excess linewidth is caused by additional index fluctuations that are associated with strong spatial gain variations.

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Section: Operation Principlementioning

confidence: 99%

Spectral linewidth analysis of semiconductor hybrid lasers with feedback from an external waveguide resonator circuit

Fan¹,

Lammerink

Mak³

et al. 2017

Opt. Express

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show abstract

“…There are several approaches for the design of integrated tunable lasers: sampled grating DBR (SGDBR), digitally tuned DBR lasers, etc., mainly developed on InP substrates [15][16][17]. Recently, tunable lasers integrating extra-cavity or intra-cavity ring resonators (RRs) have been demonstrated on InP [18,19], or by butt-coupling an already fabricated reflective semiconductor optical amplifier to an external ring resonator filter fabricated on SOI [20]. However, InP-based solutions still suffer from high losses in passive parts and yield issues, while the butt-coupling solution requires high precision mechanical positioning, which is costly and not suitable for dense photonic integration.…”

Section: Introductionmentioning

confidence: 99%

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Keyvaninia¹,

Roelkens²,

Thourhout³

et al. 2013

Opt. Express

176

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Abstract:A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 ⁰C and a thermooptic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.

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“…(1) silicon material engineering by introducing emissive centers to assist the efficient light emission (Pavesi et al, 2000;Han et al, 2001;Rotem et al, 2007a,b;Shainline and Xu, 2007), (2) strained Ge (Liu et al, 2007(Liu et al, , 2009Cheng et al, 2009;Sun et al, 2009b,c;Camacho-Aguilera et al, 2012), (3) silicon Raman laser Jalali, 2004, 2005;Rong et al, 2005aRong et al, ,b, 2007, and (4) heterogeneous integration of III/V gain materials through packaging (Chu et al, 2009;Fujioka et al, 2010;Urino et al, 2011) or wafer bonding (Park et al, 2005;Fang et al, 2007a,b;Liang et al, 2009aLiang et al, ,b, 2010Stanković et al, 2010;Grenouillet et al, 2012). …”

Section: Review On Research For Lasers On Siliconmentioning

confidence: 99%

“…Research groups from Japan devoted many efforts for the development of silicon lasers using packaging methods. Chu et al (2009) demonstrated the first wavelength-tunable-laser fabricated with silicon photonic technology, which comprised a semiconductor optical amplifier (SOA) chip and a silicon photonic chip, and were hybridintegrated by using passive alignment technology. An SiON modesize converter was adopted between the silicon waveguide and III/V SOA for low coupling loss.…”

Section: Review On Research For Lasers On Siliconmentioning

confidence: 99%

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

et al. 2015

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Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS) fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W) bonding technology, which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP) laser, lateralcoupled distributed-feedback laser with side wall grating, and mode-locked laser (MLL). From these results, the presented multiple D2W bonding technology can be a key enabler toward the large-scale heterogeneous integration of optoelectronic integrated circuits.

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Compact, lower-power-consumption wavelength tunable laser fabricated with silicon photonic-wire waveguide micro-ring resonators

Cited by 112 publications

References 16 publications

Spectral linewidth analysis of semiconductor hybrid lasers with feedback from an external waveguide resonator circuit

Spectral linewidth analysis of semiconductor hybrid lasers with feedback from an external waveguide resonator circuit

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

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