Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures

Ладугин, М. А.; Bagaev, T. A.; Маrmalyuk, А. А.; Koval, Yu P; Konyaev, V P; Sapozhnikov, S. M.; Lobintsov, A. V.; Симаков, В. А.

doi:10.1070/qel16812

Cited by 5 publications

(1 citation statement)

References 5 publications

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“…Single laser diodes, laser bars and arrays based on AlGaAs/GaAs heterostructures show a manifold increase in the differential quantum efficiency: lasers with two active regions by 1.8-2.0 times, with three-by 2.6-3.0 times, with four-by 3.4-4.0 times. Laser arrays made from these heterostructures can reach more than 1 kW of output power in a pulsed mode [11,12].…”

Section: Introductionmentioning

confidence: 99%

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE

Ладугин¹,

Yarotskaya²,

Bagaev³

et al. 2019

Crystals

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AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presented allow for the improved output characteristics of different emitting devices such as multi active region lasers, epitaxially integrated via highly doped tunnel junctions (emission wavelength λ ~ 1 μm), quantum cascade lasers (λ ~10 μm) and THz laser (λ ~100 μm), based on short-period superlattice with 500–2000 layers.

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Section: Introductionmentioning

confidence: 99%

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE

Ладугин¹,

Yarotskaya²,

Bagaev³

et al. 2019

Crystals

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Double integrated laser-thyristor

et al. 2019

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Comparative experiments are performed on a semiconductor laser with different numbers (one or two) of emitting sections monolithically integrated with an electronic switch (thyristor). It is shown that the functional integration of a laser with a thyristor in one heterostructure makes it possible to achieve efficient operation of the laser in a pulsed regime (up to 50 W), while the use of vertical integration of two laser sections in this device additionally increases the optical output power to 90 W with all other conditions being the same.

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High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures

Сліпченко¹,

Romanovich²,

Gavrina³

et al. 2022

Quantum Electron.

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The characteristics of high-power semiconductor lasers with an 800 μm emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures with three optically uncoupled laser sections are studied. The maximum power achieved under pumping by current pulses with an amplitude of 47 A and a duration of 1 μs is 110 W with the maximum active region heating not exceeding 4.7 °C. At a pulse duration of 860 μs, the maximum optical power is 22.6 W, and the decrease in the optical power to the pulse end reaches 6.7%. A decrease in the laser pulse duration to 85 μs leads to an increase in the peak laser power to 41.4 W at a pump current amplitude of 20 A.

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Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures

Cited by 5 publications

References 5 publications

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE

Double integrated laser-thyristor

High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures

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