High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures

Abstract

The characteristics of high-power semiconductor lasers with an 800 μm emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures with three optically uncoupled laser sections are studied. The maximum power achieved under pumping by current pulses with an amplitude of 47 A and a duration of 1 μs is 110 W with the maximum active region heating not exceeding 4.7 °C. At a pulse duration of 860 μs, the maximum optical power is 22.6 W, and the decrease in the optical power to the pulse end reaches 6.7%. A decrease in the laser pulse duration to 85 μs leads to an increase in the peak laser power to 41.4 W at a pump current amplitude of 20 A.

Morphological Relaxation of Strained Epitaxial Films for Stripe‐Geometry Devices

“…Several studies were aimed at using the finite size effects of channels (nanochannels) in research systems to predict the physical properties of industrial devices. [4][5][6][7][8][9] For example, the development of the fully-depleted complementary metal oxide semiconductors (FD-CMOS) technology [10] is based on ultra-thin silicon-on-insulator (SOI) [11] for which strain engineering in Si and SiGe layers of gate and source/drain areas respectively is a major technological challenge. [12,13] The unique features of nanogates can offer dramatic changes in growth modes, as well as matter and strain redistribution that are conceptually new as compared to bulk substrates given that finite-size effects come significantly into play.…”