The results obtained demonstrate that the lasing dynamics reflects the current dynamics formed as a result of complex nonlinear couplings within the laser-thyristor heterostructure. The observed specific features mainly result from the appearance of new channels for generation of excess carriers in the p-base. These channels enhance the main optical activation channel formed by the photogeneration due to the absorption of the spontaneous emission from the active region of the laser part of the heterostructure. The additional channels of excess carrier generation may have an optical nature in the case of scattered laser light upon appearance of new high-Q modes. For nearly critical blocked voltages, generation of carriers can be initiated by an avalanche multiplication of photogenerated carriers.

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This letter shows an experimentally studied approach that increases injection efficiency of high-power laser thyristors emitting in the 890-910 nm spectral band. The developed laser thyristors exhibit 43-W maximum peak output power of laser pulses at 95-nm full width at half maximum duration. At the same time, the maximum amplitude of the current pulse generated in the laser-thyristor circuit reached 90 A.Index Terms-Laser-thyristor, semiconductor laser, thyristor heterostructure.

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