Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides

Маrmalyuk, А. А.; Ryaboshtan, Yu. L.; Gorlachuk, P. V.; Ладугин, М. А.; Падалица, А. А.; Сліпченко, С. О.; Lyutetskiy, A. V.; Veselov, D. A.; Pikhtin, N. A.

doi:10.1070/qel16294

Cited by 24 publications

(12 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2 is nearly linear at low currents and shows some saturation tendency at currents high above threshold (at I > 30 A). The total overall power achieved (≈18 W at 80 A from a laser with a stripe width of 90 μm) compares favorably with published results [2], [4], [5].…”

Section: Experimental and Simulationssupporting

confidence: 86%

“…used differ substantially. Using lasers with ultra-narrow, single transverse mode symmetric waveguide structures ( [2], [3], see also [4], [5]), output power values as high as ≈16 W at wavelengths of 1500 to 1600 nm have been obtained, at pump currents of 80 A, from samples with a length of 2 mm and a stripe width of 95 μm [2]. The advantage of such structures is that they effectively combat the nonlinear optical losses at high currents.…”

mentioning

confidence: 99%

See 1 more Smart Citation

High Power $1.5\mu$ m Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Nearp-cladding

Hallman

Ryvkin

Avrutin

et al. 2019

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

We report first experimental results on a highpower pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 µm) with an asymmetric waveguide structure. The laser has a bulk active layer positioned very close to the p-cladding in order to eliminate current-induced nonuniform carrier accumulation in the p-side of the waveguide and the associated carrier losses. Moderate doping of the n-side of the waveguide is used to strongly suppress nonuniform carrier accumulation within this part of the waveguide. Highly p-doped InP p-cladding facilitates low series resistance. An as-cleaved sample with a stripe width of 90 µm exhibits an output power of about 18 W at a pumping current amplitude of 80 A. Theoretical calculations, validated by comparison to experiment, suggest that the performance of lasers of this type can be improved further by optimization of the waveguide thickness and doping as well as improvement of injection efficiency.

show abstract

Section: Experimental and Simulationssupporting

confidence: 86%

mentioning

confidence: 99%

High Power $1.5\mu$ m Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Nearp-cladding

Hallman

Ryvkin

Avrutin

et al. 2019

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

show abstract

“…We note finally that, although the absolute values of output power discussed above are the most important advantage for LIDAR applications, the proposed structure design can be ðIÞ (5). L = 0.5 mm; the waveguide parameters as in Figure 1.…”

Section: Analysis Of Laser Performancementioning

confidence: 99%

“…With regard to the spectral range of laser emission, two strategies are possible. One involves working in the eye-safe spectral range of 1300-1600 nm, allowing high output power to be used, and requiring InGaAsP/InP [2][3][4] or AlGaInAs/InP [5][6][7][8][9] based sources and photodetectors. The other involves working at shorter wavelengths and can be further subdivided in two spectral regions: λ ∼ 0.9-1.1 µm [10][11][12][13] and λ < 0.9 µm, used [14,15] for the case of nanosecond pump pulses resulting in picosecond pulse emission under gain-switched operation.…”

Section: Introductionmentioning

confidence: 99%

AlGaAs/GaAs asymmetric‐waveguide, short cavity laser diode design with a bulk active layer near the p ‐cladding for high pulsed power emission

Avrutin

Ryvkin

Kostamovaara

2021

IET Optoelectronics

View full text Add to dashboard Cite

It is shown theoretically that a GaAs/AlGaAs laser diode design using an asymmetric waveguide structure and a bulk active layer (AL), located close to the p-cladding, can provide high output power in a single, broad transverse mode for short-wavelength (<0.9 μm, matching the spectral range of high efficiency of silicon photodetectors) pulsed emission in the nanosecond pulse duration region, typically <<100 ns. The dependences of the laser performance on the thickness of the AL and the cavity length are analysed. It is shown that the relatively thick bulk AL allows the of short cavity lengths (<1 mm), for achieving high pulsed power while maintaining a relatively low series resistance and a narrow far field. | STRUCTUREThe logic behind the structure design is the same as used earlier (Refs. [3,4,18] and references therein) in the work long-This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

show abstract

“…1.3–1.5 μm wavelength semiconductor quantum well (QW) lasers have great potential in the application fields of optical communications, eye-safety lidar and three-dimensional imaging [ 1 , 2 ]. Due to the large conduction-band offset and low valence-band offset, AlGaInAs series of III–V materials that take advantage of good high-temperature performance, suitable photon energy and high material gain have become indispensable for 1.3–1.5 μm InP-based laser diode [ 3 , 4 , 5 ].…”

Section: Introductionmentioning

confidence: 99%

Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence

et al. 2020

View full text Add to dashboard Cite

AlGaInAs quantum well (QW) lasers have great potential in the application fields of optical communications and eye-safety lidars, owing to the advantages of good gain performance. A large amount of experimental evidence indicated that carrier dynamic affects the resonant frequency and modulation response performance of QW lasers. However, the mechanism of carrier dynamic in AlGaInAs QW structure is still ambiguous for complicated artificial multilayers. In this paper, the carrier dynamic of AlGaInAs QW structure was investigated by temperature-dependent time-resolved photoluminescence (TRPL) in the range of 14 to 300 K. Two relaxation times (a fast component and a slow one) have a major impact on the PL emission spectra of the AlGaInAs QW below 200 K. The carriers prefer a fast decay channel in the low temperature regime, whereas the slow one a higher temperature. An unconventional temperature dependence of carrier relaxation is observed in both decay processes. The carriers’ lifetime decreases with the temperature increasing till 45 K and then increases with temperature up to 250 K. It is quite different from that in the bulk semiconductor. The mechanism of temperature-dependent carrier relaxation at temperatures above 45 K is a combination of dark state occupation and a nonradiative recombination process.

show abstract

Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides

Cited by 24 publications

References 1 publication

High Power $1.5\mu$ m Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Nearp-cladding

High Power $1.5\mu$ m Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Nearp-cladding

AlGaAs/GaAs asymmetric‐waveguide, short cavity laser diode design with a bulk active layer near the p ‐cladding for high pulsed power emission

Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence

Contact Info

Product

Resources

About