High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength

High-Power Laser Thyristors With High Injection Efficiency ($\lambda =890$ –910 nm)

“…We used a laser heterostructure with a narrow waveguide as the most technologically convenient solution providing a high emission efficiency at short cavity lengths for peak optical power of 40-50 W [9]. Unlike the heterostructure described in previous works [5], [6], the studied heterostructure provided spontaneous emission absorption only in the p-base region of the heterophototransistor. This was achieved by excluding the n-GaAs layer from the collector region.…”

“…To further improve the efficiency of accumulation of photogenerated holes, we also made thinner the p-base because, according to our calculations, only a part of the p-base is overlapped by the space charge region at the maximum blocking voltage. An estimation made using the Bouguer-Lambert-Beer law gives the following concentrations relation for photogenerated carriers in the p-base of heterophototransistor of designed structure and the structure in [5] and [8] n p2 n p1…”

“…From this relation it is seen that photogenerated carriers concentration increase is determined by the following factors: photon intensity flux at p-collector and p-base boundary, defined by absorbed layer thickness in p-collector W C of the structure from [5] and [8]; absorption coefficient α and thicknesses of base layers of the investigated structure W B2 and the structure from [5] and [8] W B1 . Besides, at initial stage of laser-thyristor turn-on, when collector junction is reverse-biased, quasineutral region thickness of the p-base in the designed structure W nat2 and the structure from [5] and [8] W nat1 plays an important role.…”

“…This approach has the following drawbacks: stray-load losses in the external circuit, complex design, and large dimensions of the pulse source designed for excitation of the multi-element assemblies. For the first time in [5], we used the approach based on epitaxial and functional integration of high-power current switch and laser heterostructure to generate high-power pulse laser emission. A low-voltage thyristor heterostructure was used as a current switch.…”

“…A low-voltage thyristor heterostructure was used as a current switch. As a result, 10-100 mA low signal current control has been demonstrated, which is used to generate laser pulses on the order of 100 ns and up to 28 W output optical power [5], [6]. The results of a detailed study of the output characteristics of lasersthyristors, reported in [8], demonstrated a strong nonlinearity of the dynamics of radiative processes.…”