Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation

Akturk, Akin; Holloway, Michael; Potbhare, Siddharth; Gundlach, David J.; Li, B; Goldsman, N.; Peckerar, M.; Cheung, Kin P.

doi:10.1109/ted.2010.2046458

Cited by 44 publications

(17 citation statements)

References 25 publications

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“…One of the key parameters in conventional MOSFET models is the threshold voltage, which is an essential quantity in MOSFET circuit design and an effective quality control indicator when evaluating device reliability [4]. Several works have mentioned the increase of the threshold voltage when temperature decreases mainly due to the change of Fermi potential [2,3,[5][6][7][8][9][10][11]. Some attempts have been made to create low temperature MOS models, in which the threshold voltage at room temperature is replaced by its cold value [6,7], or by polynomial fitting functions [8,10].…”

Section: Introductionmentioning

confidence: 99%

An enhanced MOSFET threshold voltage model for the 6–300 K temperature range

Dao

Kass

Azghadi

et al. 2017

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

An enhanced MOSFET threshold voltage model for the 6–300 K temperature range

Dao

Kass

Azghadi

et al. 2017

Microelectronics Reliability

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show abstract

“…Since the other The simulation is carried out at 80K, although it is beyond the valid range of the device models provided by the foundry. Due to the absence of accurate models [21], enough margins have to be left for the increases of channel conductance and threshold voltages [22].…”

Section: Simulation and Discussionmentioning

confidence: 99%

Analysis and improvement of ramp gain error in single-ramp single-slope ADCs for CMOS image sensors

Cheng

Zeng

Feng

2016

Microelectronics Journal

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The single-ramp single-slope (SRSS) analog-to-digital converter (ADC) is a promising candidate for column-parallel architectures. This paper, for the first time, quantitatively analyzes the ramp gain error in the ramp-input stage (RIS) that is the crucial component in such ADC, and verifies it using behavior model simulation. In contrast to the conventional passive RIS, an active RIS is proposed to alleviate the ramp gain error. With an active feedback loop, the ramp gain becomes a product of two reciprocal ratios of capacitance, whose departure from unity is attributed to the relative deviations rather than the absolute values in the passive RIS. The proposed concept is designed and verified by simulations in a 0.18-µm CMOS process.

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“…Industry-standard compact models are not readily available for deep cryogenic temperatures (<50 K) [54]. While DC current characteristics down to 77 K can still be adequately modeled, the embedded temperature-scaling in compact models is not sufficient to reach down to 4.2 K and lower temperatures using reasonable values for the physical parameters.…”

Section: Mosfet Modeling At Cryogenic Temperaturesmentioning

confidence: 99%

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

Jazaeri

Beckers

Tajalli

et al. 2019

2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems"

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Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is currently way ahead of all other qubit implementations. This paper briefly reviews the progress made on the silicon-based QC platform, which is highly promising to meet the scale-up challenges by leveraging the semiconductor industry. We look at different types of qubits, the advantages of silicon, and techniques for qubit manipulation in the solid state. Finally, we discuss the possibility of co-integrating silicon qubits with FET-based, cooled front-end electronics, and review the device physics of MOSFETs at deep cryogenic temperatures.

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Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation

Cited by 44 publications

References 25 publications

An enhanced MOSFET threshold voltage model for the 6–300 K temperature range

An enhanced MOSFET threshold voltage model for the 6–300 K temperature range

Analysis and improvement of ramp gain error in single-ramp single-slope ADCs for CMOS image sensors

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

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