Compact 2D threshold voltage modeling and performance analysis of ternary metal alloy work-function-engineered double-gate MOSFET

Saha, Priyanka; Sarkhel, Saheli; Sarkar, Subir Kumar

doi:10.1007/s10825-017-1015-6

Cited by 11 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The threshold voltage ( V th ) is defined to be that gate‐to‐source voltage ( V gs ) at which the surface potential minimum equals two times the Fermi potential [16]. Since the position of minimum surface potential occurs under M 1 (as evident from the surface potential plots such as Figs.…”

Section: Analytical Modellingmentioning

confidence: 99%

Analytical modelling and performance analysis of gate engineered TG silicon‐on‐nothing metal–oxide–semiconductor field‐effect transistor

Banerjee¹,

Saha²,

Sarkar³

2018

IET Circuits, Devices & Systems

Self Cite

View full text Add to dashboard Cite

This study presents a three-dimensional (3D) analytical model of triple material tri-gate silicon-on-nothing metaloxide-semiconductor field-effect transistor. The performance of the device by varying the different device parameters as well as the device's immunity toward the various short channel effects such as Drain-induced barrier lowering (DIBL), hot carrier effect, threshold-voltage roll-off and subthreshold swing are investigated. The 3D Poisson's equation with appropriate boundary conditions is solved considering the parabolic potential approximation method to obtain the surface potential distribution. In addition, the calculations for threshold voltage and electric field are also done and the results obtained are verified using a 3D device simulator, namely ATLAS from SILVACO.

show abstract

Section: Analytical Modellingmentioning

confidence: 99%