Analytical modelling and performance analysis of gate engineered TG silicon‐on‐nothing metal–oxide–semiconductor field‐effect transistor

Banerjee, Pritha; Saha, Priyanka; Sarkar, Subir Kumar

doi:10.1049/iet-cds.2017.0473

Cited by 5 publications

(1 citation statement)

References 17 publications

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“…Today several multiphysics simulators are available. They all rely on the deployment of physical models using different mathematical tools [14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation

Jouha

Oualkadi

Dherbécourt

et al. 2020

IET Circuits, Devices & Systems

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In this study, the authors aim at investigating the static electro-thermal behaviour of two new generations of power silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs). The studied devices are commercialised and have a vertical structure. Two approaches are followed: device modelling and physical simulation. An improved compact model based on an accurate method of parameters extraction is introduced. The simulation results obtained with this method perfectly fit the measurements. The parameters extracted precisely from the model (threshold voltage, saturation region transconductance and transverse electric field parameter) are used to accurately analyse the static behaviour of 1200 V Gen 2 and 900 V Gen 3 SiC MOSFETs. Physical simulation is conducted to understand the impact of the temperature and the physical parameters on the threshold voltage and the on-state resistance.

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“…Today several multiphysics simulators are available. They all rely on the deployment of physical models using different mathematical tools [14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%