Commercial plasma source ion implantation facility

Scheuer, J.T.; Walter, K.C.; Adler, R.A.; Horne, W.G.

doi:10.1016/s0257-8972(97)00043-1

Cited by 10 publications

(2 citation statements)

References 4 publications

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“…are much sought after. Commercial facilities have been developed [2]. This technology has also been used in the semiconductor field such as doping [3].…”

Section: Introductionmentioning

confidence: 99%

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Metallic Plasma and its Hybrid Plasma

Yukimura

2008

IEEJ Transactions Elec Engng

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Plasma‐ion processing enhances functionalities of a film, such as tribological properties and biocompatibility. Ceramic films prepared by reactive deposition and ion implantation are preferred rather than metallic film deposition by physical vapor deposition (PVD). Metallic plasma sources are indispensable for plasma‐ion processing. Cathodic arc plasma sources and magnetron sputtering discharge are typical metallic plasma sources for the processing. In addition to these sources, there have been newly developed plasma sources, in which plasmas have been generated both in a stationary and a pulsed mode. For a short duration of the generation, the plasma can be stably maintained. To prepare ceramic films, reactive gases such as nitrogen and oxygen should be activated to enhance reactions between the metallic and gaseous species. In this case, a hybrid plasma (HP) comprised of metallic and gaseous species is desirable. In order to make a large volume of HP in a simple way, gaseous plasma should be triggered by the metallic plasma. This article is a review of the electrical characteristics of the cathodic arc and its induced gaseous plasma. Copyright © 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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“…are much sought after. Commercial facilities have been developed [2]. This technology has also been used in the semiconductor field such as doping [3].…”

Section: Introductionmentioning

confidence: 99%

“…Metal, gas, or metal-in-gas plasmas have been used. Not only ion implantation but also processing of a more general kind has been simultaneously carried out using PBII&D technology [4]. PBII-&-D has features as follows:…”

Section: Introductionmentioning

confidence: 99%