Generation of high voltage pulses for PBII devices

Günzel, R.; Rogozin, A.I.; Demski, M; Rukin, S. N.; Brutscher, J.; H.G.G, Th.; Weise,

doi:10.1016/s0257-8972(02)00112-3

Cited by 7 publications

(3 citation statements)

References 22 publications

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“…Over the last decade, a number of PBII-specific pulse generators were developed for industrial applications ranging 10 to 100 kV and 0.1 to 10 kA, see reviews [62,74]; a number of devices utilize transistor switches and pulse transformers [75][76][77].…”

Section: Pulse Generator Technologymentioning

confidence: 99%

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Pelletier

Anders

2005

IEEE Trans. Plasma Sci.

169

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After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modelling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used 1 of PBII&D to produce surgical implants, bio-and blood-compatible surfaces and coatings, etc.With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures.We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.2

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Section: Pulse Generator Technologymentioning

confidence: 99%

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Pelletier

Anders

2005

IEEE Trans. Plasma Sci.

169

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“…1(a). 7,15 A variable dc high voltage power supply charges energy storage capacitor C 1 through resistor R 1 and diode D 1 . The tetrode SW 1 is utilized as the main switch to discharge capacitor C 1 through resistor R 2 , inductor L 1 , and the load.…”

Section: A Main Power Circuitmentioning

confidence: 99%

High voltage pulser with a fast fall-time for plasma immersion ion implantation

Zhu

Gong

Xia

et al. 2011

Review of Scientific Instruments

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A novel high voltage (HV) modulator that offers a short fall time to minimize sputtering effects and allow more precise control of the incident ion fluence in plasma immersion ion implantation is described. The use of 36 insulated-gate bipolar transistors in the 30 kV hard-tube pulser reduces the HV fall time to 3.5 μs, compared to a fall time of 80 μs if a pull-down resister is used. The voltage balance is achieved by a voltage-balancing resistor, clamped capacitance, and the synchronization of drive signals. Compared to the traditional method employing a pull-down resister or an additional hard tube, our design consumes less power and is more economical and reliable.

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“…7,8 The development of insulated gate bipolar transistors (IGBTs) with high power conductivity, which are used as basic switching elements in modern pulsed plasma generators, has contributed a great deal to the spread of the above techniques. 9 Unlike thyristors, IGBTs enable efficient and simple switching off of power supply when gas discharge instability in pulsed plasma appears. 10 Compared with the other techniques for surface engineering, pulsed plasma processes have several advantages, including a better control of the surface layer architecture, chemical composition and functional characteristics, and unlike the other techniques, it is environment friendly.…”

Section: Introductionmentioning

confidence: 99%

Influence of process parameters in pulse plasma nitriding of plain carbon steel

Đurišić

Kunosić

Trifunovic

2006

Surface Engineering

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Glow discharge nitriding is widely used to improve the mechanical characteristics of steel components. This treatment produces a modified surface layer, consisting of an outer compound zone and an inner diffusion zone. The compound zone (white layer) is the first zone and therefore, is the contact surface layer. It is of particular interest for establishing the exploitation features of engineering components exposed to the wear and corrosion. It is important to analyse the mechanical and tribological features of this layer. With the aim of optimising the nitriding process and gaining an insight for further research, experimental studies of the pulsed plasma nitriding of plain carbon steel grade DIN C45 (AISI C1043) were carried out, using a pulsed direct current glow discharge. The influence of gas composition, temperature, treatment time, duty cycle and frequency on compound layer thickness and microhardness has been investigated. Five experiments were performed. In each experiment, one of the process parameters was varied while the others were kept constant. The characteristics of the nitride surface layers were studied by optical metallography, Vickers microhardness measurement as well as specially modified Calo test method. The results obtained could be useful in optimising of the nitriding process and computer process control. Surface Engineering 2006 VOL 22 NO 2 9 Compound layer thickness (left) and surface microhardness (right) as function of power supply pulse frequency Ðurišić et al. Influence of process parameters in pulse plasma nitriding Surface Engineering 2006 VOL 22 NO 2

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Generation of high voltage pulses for PBII devices

Cited by 7 publications

References 22 publications

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

High voltage pulser with a fast fall-time for plasma immersion ion implantation

Influence of process parameters in pulse plasma nitriding of plain carbon steel

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