Combining model-based measurement results of critical dimensions from multiple tools

Zhang, Nien Fan; Barnes, Bryan M.; Zhou, Hui; Henn, Mark-Alexander; Silver, Richard M.

doi:10.1088/1361-6501/aa5586

Cited by 9 publications

(6 citation statements)

References 24 publications

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“…Improvements of as much as 4 nm for top width after OCD hybridization with AFM are common 138 . Other combinations include CD-SAXS and SEM 53, 140 ; SEM and OCD 140, 141 . ; AFM and SEM 123 .…”

Section: Hybrid or Combined Metrologymentioning

confidence: 99%

“…Examples include an offset of 2.7 nm between the middle CD as measured by CD-AFM and EUV scatterometry 150 and a difference of 0.8 nm in CD for nominally 13 nm lines as measured by CD-SAXS and model-based library SEM 53 . In these cases, traceability to a reference (and carefully identifying the error sources) could help reduce deviations 140 , and clarify if these are fundamental differences in the measurement physics. In addition, standardized parameter definitions and sample registration methods need to be implemented to ensure agreement at the nanoscale.…”

Section: Hybrid or Combined Metrologymentioning

confidence: 99%

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Metrology for the next generation of semiconductor devices

Badaroglu²,

et al. 2018

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The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering limits such as heat dissipation, carrier mobility and fault tolerance thresholds. At present, it is unclear which are the best measurement methods needed to evaluate the nanometre-scale features of such devices and how the fundamental limits will affect the required metrology. Here, we review state-of-the-art dimensional metrology methods for integrated circuits, considering the advantages, limitations and potential improvements of the various approaches. We describe how integrated circuit device design and industry requirements will affect lithography options and consequently metrology requirements. We also discuss potentially powerful emerging technologies and highlight measurement problems that at present have no obvious solution.

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Section: Hybrid or Combined Metrologymentioning

confidence: 99%

Section: Hybrid or Combined Metrologymentioning

confidence: 99%

Metrology for the next generation of semiconductor devices

Badaroglu²,

et al. 2018

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“…The next year, industry built upon the concept and renamed it "hybrid metrology," (49) the accepted name for the technology. Our group and our NIST collaborators have since researched quantitative hybrid metrology (50), hybrid metrology for data with a constant systematic bias (51), and also combined regression, the fitting of two or more model-based measurements simultaneously (52). In response, the industry has published several papers (53-60) often using otherwise "competing" metrology techniques, such as scanning electron microscopy and spectroscopic ellipsometry (60).…”

Section: Hybrid Metrologymentioning

confidence: 99%

Appraising the Extensibility of Optics-Based Metrology for Emerging Materials

Barnes¹,

Henn²,

Sohn³

et al. 2019

ECS Trans.

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To advance computational capabilities beyond conventional scaling limitations, novel device architectures enabled by emerging materials may be required. Optics-based methodologies, central to modern-day process control, will be pursued by the nanoelectronics industry to interrogate these devices as optics are inexpensive, nondestructive, and fast. As geometrical and material complexity define new metrology requirements, these should be considered relative to the broader challenge of perpetuating optical methods for deep-subwavelength features. Using examples from our group and from others, the tailoring of the illumination conditions, sample, collection path, and data analysis are emphasized for model-based quantitative measurements. The successful fitting of structures comprised from these emerging materials will require the accurate determination of material optical constants, which may be both thickness dependent and anisotropic. Atomistic models such as tight-binding calculations or density-functional theory are potential approaches for understanding the dielectric function of these materials.

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“…But for most investigators, it is difficult to have access to these distinctive probes. In addition, since a line pattern is always scanned discontinuously by these tilted methods, some special reconstruction procedures are also needed for complete 3D topography [13][14][15]. This process probably introduced extra measurement error due to positioning uncertainty.…”

Section: Measurement Science and Technologymentioning

confidence: 99%

A CD probe with a tailored cantilever for 3D-AFM measurement

Zhang

Liu

et al. 2018

Meas. Sci. Technol.

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A critical dimensional (CD) probe, such as a boot shaped probe, is widely used for measuring the sidewall profiles of nanostructures in atomic force microscopy (AFM). However, conventional CD probes usually have high spring constants that restrict their ability to operate in critical dimension scanning modes. Furthermore, the flexure spring constant of the tip is much smaller than the torsion spring constant of the cantilever, which probably makes the sidewall measurement unstable. Here, we proposed a method of tailoring the probe where the cantilever was trimmed to reduce the spring constant. The simulation results, using a finite element method (FEM), illustrated that both the flexure and torsion spring constants decreased nearly ten times. Meanwhile, the torsional resonant frequency decreased to below 1 MHz, which could benefit the torsional oscillation scanning. By using a focused ion beam (FIB), a CD probe with a rectangular cantilever was reprocessed. It was mounted to a home-built three-dimensional AFM system (3D-AFM), and had the flexure and torsion sensitivities precisely calibrated. The ratio of the flexure sensitivity to torsion sensitivity showed good accordance with the simulation results. Additionally, a grating standard sample was measured using the tailored probe under a modified step-in scanning mode, and the error due to torsional deformation of the tip was compensated. The measurement results demonstrated the validity of the tailored CD probe in 3D metrology.

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Combining model-based measurement results of critical dimensions from multiple tools

Cited by 9 publications

References 24 publications

Metrology for the next generation of semiconductor devices

Metrology for the next generation of semiconductor devices

Appraising the Extensibility of Optics-Based Metrology for Emerging Materials

A CD probe with a tailored cantilever for 3D-AFM measurement

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