The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering limits such as heat dissipation, carrier mobility and fault tolerance thresholds. At present, it is unclear which are the best measurement methods needed to evaluate the nanometre-scale features of such devices and how the fundamental limits will affect the required metrology. Here, we review state-of-the-art dimensional metrology methods for integrated circuits, considering the advantages, limitations and potential improvements of the various approaches. We describe how integrated circuit device design and industry requirements will affect lithography options and consequently metrology requirements. We also discuss potentially powerful emerging technologies and highlight measurement problems that at present have no obvious solution.

In critical dimension atomic force microscopy (CD-AFM), a major source of uncertainty is due to the tip. Measurements made using a CD-AFM tip show an apparent broadening of the feature width. Usually, the linewidth can be approximately corrected if the tip width is known. In addition to tip width broadening, tip-shape-dependent effects—also known as higher order tip effects—are a contributor to the uncertainty of CD-AFM linewidth measurements. These are especially important for undercut features and samples with relatively large sidewall roughness. In this paper, we examine the different types of CD-AFM higher order tip effects within the context of a reference measurement system and present a procedure for estimating some of these contributions with an uncertainty of less than 1.5 nm.

The National Institute of Standards and Technology (NIST) and SEMATECH have been working together to improve the traceability of critical dimension atomic force microscope (CD-AFM) dimensional metrology in semiconductor manufacturing. A major component of this collaboration has been the implementation of a Reference Measurement System (RMS) at SEMATECH using a current generation CD-AFM. An earlier tool, originally used at SEMATECH, has now been installed at NIST. Uncertainty budgets were developed for pitch, height, and CD measurements using both tools. At present, the standard uncertainties are approximately 0.2 % for pitch measurements and 0.4 % for step height measurements. Prior to the current work, CD-AFM linewidth measurements were limited to a standard uncertainty of about 5 nm. However, this limit can now be significantly reduced. This reduction results from the completion of the NIST/SEMATECH collaboration on the development of single crystal critical dimension reference materials (SCDDRM). A new generation of these reference materials was released to SEMATECH Member Companies during late 2004. The SEMATECH RMS was used to measure the linewidths of selected features on the distributed specimens. To reduce the uncertainty in tip width calibration, a separate transfer experiment was performed in which samples were measured by CD-AFM and then sent for high resolution transmission electron microscopy (HRTEM). In this manner, CD-AFM could be used to transfer the HRTEM width information to the distributed samples. Consequently, we are now able to reduce the limit on the standard uncertainty (k = 1) of CD-AFM width measurements to 1 nm.

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For many years, lithographic resolution has been the main obstacle for keeping the pace of transistor densification to meet Moore's Law. For the 45 nm node and beyond, new lithography techniques are being considered, including immersion ArF lithography (iArF) and extreme ultraviolet (EUV) lithography. As in the past, these techniques will use new types of photoresists with the capability to print 45 nm node (and beyond) feature widths and pitches.In a previous paper ("SEM Metrology for Advanced Lithographies," Proc SPIE, v6518, 65182B, 2007), we compared the effects of several types of resists, ranging from deep ultraviolet (DUV) (248 nm) through ArF (193 nm) and iArF to extreme UV (EUV, 13.5 nm). iArF resists were examined, and the results from the available resist sample showed a tendency to shrink in the same manner as the ArF resist but at a lower magnitude.This paper focuses on variations of iArF resists (different chemical formulations and different lithographic sensitivities) and examine new developments in iArF resists during the last year. We characterize the resist electron beam induced shrinkage behavior under scanning electron microscopy (SEM) and evaluate the shrinkage magnitude on mature resists as well as R&D resists. We conclude with findings on the readiness of SEM metrology for these challenges.

Scanning probe microscope (SPM) dimensional metrology efforts at the US National Institute of Standards and Technology (NIST) are reviewed in this paper. The main SPM instruments for realizing the International System of Units (SI) are the Molecular Measuring Machine, the calibrated atomic force microscope and the critical dimension atomic force microscope. These are optimized for long-distance measurements, three-dimensional measurements over conventional SPM distances and critical dimension or linewidth measurements, respectively. 10 mm distances have been measured with the relative standard uncertainty, uc, of 1.5 × 10−5; step heights at the 100 nm scale have been measured with the relative uc of 2.5 × 10−3 and sub-micrometer linewidths have been measured with uc = 0.8 nm.

The National Institute of Standards and Technology ͑NIST͒ and SEMATECH are working to address traceability issues in semiconductor dimensional metrology. In semiconductor manufacturing, many of the measurements made in the fab are not traceable to the SI unit of length. This is because a greater emphasis is often placed on precision and tool matching than on accuracy. Furthermore, the fast pace of development in the industry makes it difficult to introduce suitable traceable standard artifacts in a timely manner. To address this issue, NIST and SEMATECH implemented a critical-dimension atomic-force-microscopebased reference measurement system ͑RMS͒. The system is calibrated for height, pitch, and width, and has traceability to the SI definition of length in all three axes. Because the RMS is expected to function at a higher level of performance than inline tools, the level of characterization and handling of uncertain sources is on a level usually seen in instruments at national measurement institutes. In this work, we discuss recent progress in reducing the uncertainty of the instrument as well as details of a newly implemented performance monitoring system. We also present an example of how the RMS concept can be used in a semiconductor manufacturing environment.

The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology. There are two major instruments being used for traceable AFM measurements at NIST. The first is a custom in-house metrology AFM, called the calibrated AFM (C-AFM), and the second instrument is a commercial critical dimension AFM (CD-AFM). The C-AFM has displacement metrology for all three axes traceable to the 633 nm wavelength of the Iodine-stabilized He-Ne laser. In the current generation of this system, the relative standard uncertainty of pitch and step height measurements is approximately 1.0 ×10 -3 for pitches at the micrometer scale and step heights at the 100 nm scale, as supported by several international comparisons. We expect to surpass this performance level soon. Since the CD-AFM has the capability of measuring vertical sidewalls, it complements the C-AFM. Although it does not have intrinsic traceability, it can be calibrated using standards measured on other instruments -such as the C-AFM, and we have developed uncertainty budgets for pitch, height, and linewidth measurements using this instrument. We use the CD-AFM primarily for linewidth measurements of near-vertical structures. At present, the relative standard uncertainties are approximately 0.2 % for pitch measurements and 0.4 % for step height measurements. As a result of the NIST single crystal critical dimension reference material (SCCDRM) project, it is possible to calibrate CD-AFM tip width with a 1 nm standard uncertainty. We are now using the CD-AFM to support the next generation of the SCCDRM project. In prototypes, we have observed features with widths as low as 20 nm and having uniformity at the 1 nm level.