Combined visible light photo-emission and low temperature thermionic emission from nitrogen doped diamond films

Sun, Tianze; Koeck, Franz A.; Zhu, Chiyu; Nemanich, R. J.

doi:10.1063/1.3658638

Cited by 52 publications

(39 citation statements)

References 20 publications

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“…Most significantly, the diamond on Si showed a substantial increase in intensity as the temperature was increased, while for diamond on metals the intensity was approximately constant with temperature [21,22]. This comparison indicates that the PETE mechanism is consistent with the emission intensity increase for diamond films on Si substrates.…”

Section: Rapid Communicationssupporting

confidence: 69%

“…4). The diamond-metal samples have shown relatively constant photoinduced emission intensity [21,22], which is consistent with the conventional Fowler-DuBridge model [2,28] that only involves direct photoemission. These results are consistent with the model discussed here, since PETE is not expected from a metal substrate.…”

Section: Rapid Communicationssupporting

confidence: 62%

“…Effective work functions of 1.3 eV with nitrogen doping and 0.9 eV with phosphorus doping have been reported for n-type chemical vapor deposited diamond [19,20]. These low work function surfaces enable visible light photoinduced electron emission and low temperature thermionic electron emission from diamond films on metallic substrates [21][22][23].…”

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confidence: 99%

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Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates

et al. 2014

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This work presents a spectroscopic study of the thermally enhanced photoinduced electron emission from nitrogen-doped diamond films prepared on p-type silicon substrates. It has been shown that photonenhanced thermionic emission (PETE) can substantially enhance thermionic emission intensity from a p-type semiconductor. An n-type diamond/p-type silicon structure was illuminated with 400-450 nm light, and the spectra of the emitted electrons showed a work function less than 2 eV and nearly an order of magnitude increase in emission intensity as the temperature was increased from ambient to ß400°C. Thermionic emission was negligible in this temperature range. The results are modeled in terms of contributions from PETE and direct photoelectron emission, and the large increase is consistent with a PETE component. The results indicate possible application in combined solar/thermal energy conversion devices.

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Section: Rapid Communicationssupporting

confidence: 69%

Section: Rapid Communicationssupporting

confidence: 62%

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Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates

et al. 2014

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“…The combination of these properties makes diamond an interesting candidate for PETE cathodes, either by itself, or as a thin film over a substrate. Electron emission from n-type diamond films over a metallic substrate under combined visible light illumination and heating showed a low effective work function of about 2 eV [50]. However, in this case the electrons are photo-excited in the metal, and then thermalize as they pass through the diamond film, which is somewhat different compared to PETE in a semiconductor substrate.…”

Section: Diamond Cathodesmentioning

confidence: 89%

Solar energy conversion with photon-enhanced thermionic emission

Kribus

Segev

2016

J. Opt.

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Photon-enhanced thermionic emission (PETE) converts sunlight to electricity with the combined photonic and thermal excitation of charge carriers in a semiconductor, leading to electron emission over a vacuum gap. Theoretical analyses predict conversion efficiency that can match, or even exceed, the efficiency of traditional solar thermal and photovoltaic converters. Several materials have been examined as candidates for radiation absorbers and electron emitters, with no conclusion yet on the best set of materials to achieve high efficiency. Analyses have shown the complexity of the energy conversion and transport processes, and the significance of several loss mechanisms, requiring careful control of material properties and optimization of the device structure. Here we survey current research on PETE modeling, materials, and device configurations, outline the advances made, and stress the open issues and future research needed. Based on the substantial progress already made in this young topic, and the potential of high conversion efficiency based on theoretical performance limits, continued research in this direction is very promising and may yield a competitive technology for solar electricity generation.

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“…Owing to the strong sensitivity to carrier lifetimes and absorption, III-V semiconductors are the preferred active materials for fabrication of PETE devices, 27 , 28 which have been investigated in terms of surface tailoring to more effectively capture sunlight 29 and in terms of thermally driven degradation of the emitting coating. 30 Interesting alternatives are low-work-function nanocrystalline, 31 polycrystalline, 32 and black diamond fi lms, 33 , 34 based on surface nanotexturing to improve the optical and photoelectronic interaction of diamond with sunlight. 35 …”

Section: Thermionic Emissionmentioning

confidence: 99%

Electron-emission materials: Advances, applications, and models

Trucchi

Melosh

2017

MRS Bull.

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Electron emission represents the key mechanism enabling the development of devices that have revolutionized modern science and technology. Today, science still relies on advanced electron-emission devices for imaging, electronics, sensing, and high-energy physics. New generations of emission devices are continuously being improved based on innovative materials and the introduction of novel physical concepts. Recent advances are highlighted by emerging low-work-function and low-dimensional materials with unusual electronic and thermal properties. Nanotubes, nanowires, graphene, and electron-emission models are discussed in this issue, as well as original mechanisms, such as the thermoelectronic effect, thermionic emission, and heat trap processes. Advances in electron-emission materials and physics are driving a renaissance in the fi eld, both opening up new applications, such as energy conversion and ultrafast electronics, as well as improving traditional applications in electron imaging and high-energy science. ELECTRON-EMISSION MATERIALS: ADVANCES, APPLICATIONS, AND MODELS 489MRS BULLETIN • VOLUME 42 • JULY 2017 • www.mrs.org/bulletin thermionic, and fi eld electron emission, or combinations of one or more of these. Each particular physical stimulus necessitates cathode materials with physical properties specifi cally engineered for optimal performance. This section will present an overview of the latest results on the development of advanced materials and related applications, categorized by the specifi c type of electron emission. Photoemission and secondary electron emissionPhotomultipliers remain the lowest noise, highest sensitivity, and fastest imaging systems. Used, for instance, in fl uorescence and laser scanning confocal microcopy, they exploit electron emission from a photocathode and, successively, secondary emissions from electron multiplying stages. Photons to be detected induce the emission of electrons from a material, usually a thin layer in transmission mode. The emitted electron can be accelerated in a vacuum tube by an electric fi eld toward an electron multiplier stage composed of a set of dynodes, which are basic components that emit several low-energy electrons (secondary electrons) when one high-energy electron (primary electron) impinges on their surfaces. Figure 2 shows two common photomultiplier confi gurations. The sensitivity of photocathodes depends on the energy of impinging photons. Consequently, it is not possible to defi ne the best possible photoemission material for a wide range of optical wavelengths.III-V semiconductors with a bandgap engineered according to the corresponding photon energy band are the preferred solution for detecting visible and infrared (IR) radiation; these are also characterized by ultrafast response.4 Cesium-coated GaAs operates at wavelengths up to 930 nm, whereas InGaAs extends the IR range up to 1700 nm. Ag-O-Cs materials are also used for visible-IR detection, with a preferred use in the near-IR region due to a higher sensitivity.5 Multi-alkali-b...

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Combined visible light photo-emission and low temperature thermionic emission from nitrogen doped diamond films

Cited by 52 publications

References 20 publications

Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates

Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates

Solar energy conversion with photon-enhanced thermionic emission

Electron-emission materials: Advances, applications, and models

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