2014
DOI: 10.1103/physrevb.90.121302
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Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates

Abstract: This work presents a spectroscopic study of the thermally enhanced photoinduced electron emission from nitrogen-doped diamond films prepared on p-type silicon substrates. It has been shown that photonenhanced thermionic emission (PETE) can substantially enhance thermionic emission intensity from a p-type semiconductor. An n-type diamond/p-type silicon structure was illuminated with 400-450 nm light, and the spectra of the emitted electrons showed a work function less than 2 eV and nearly an order of magnitude … Show more

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Cited by 35 publications
(22 citation statements)
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“…Moreover, diamond‐based electronic devices show outstanding performance for high‐power and high‐frequency applications, due to the high breakdown field, the low dielectric constant, and the high carrier mobility . Finally, the possibility of achieving negative electron affinity (NEA) by surface hydrogenation makes diamond unique among the materials suitable for the fabrication of efficient thermionic converters …”
Section: Introductionmentioning
confidence: 99%
“…Moreover, diamond‐based electronic devices show outstanding performance for high‐power and high‐frequency applications, due to the high breakdown field, the low dielectric constant, and the high carrier mobility . Finally, the possibility of achieving negative electron affinity (NEA) by surface hydrogenation makes diamond unique among the materials suitable for the fabrication of efficient thermionic converters …”
Section: Introductionmentioning
confidence: 99%
“…However, in this case the electrons are photo-excited in the metal, and then thermalize as they pass through the diamond film, which is somewhat different compared to PETE in a semiconductor substrate. Combined photoemission and PETE was observed with a p-type Si substrate covered by an n-type nitrogen doped diamond film [46], as shown in figure 8(a). The dependence of the emission rate on incident photon energy at each temperature shows that the process is not pure PETE, and has a significant contribution of photoemission.…”
Section: Diamond Cathodesmentioning
confidence: 96%
“…The effect provides a substantial enhancement of the emitter current density for moderate temperatures (i.e., at temperatures below the point where pure thermionic emission dominates). The PETE effect has been reported for gallium nitride:cesium surfaces and for silicon/ diamond double layer structures (Schwede et al, 2010;Sun et al, 2014). The role of surface and interface recombination has also been explored in III-V heterostructures (Schwede et al, 2013).…”
Section: Photon-enhanced Thermionic Emission (Pete)mentioning
confidence: 99%
“…The creation of nanostructured emitters that take advantage of the promising properties of nanotubes and nanowires, the development of novel grid structures to minimize space-charge effects (Meir et al, 2013), molecular/ion-enhanced emission (Koeck et al, 2011), and the use of microplasmas (Go and Venkattraman, 2014) are examples of the former, while the use of photon-enhanced thermionic emission (PETE) (Schwede et al, 2010(Schwede et al, , 2013Sun et al, 2014), the efficient light-induced heating of one-dimensional materials through unusual heat localization (Heat Trap), which enable new possibilities for solar thermionics (Yaghoobi et al, 2011(Yaghoobi et al, , 2012, and the combination of the thermionic and tunneling phenomena (the field-emission heat engine) to increase efficiency (Pan et al, 2014), are examples of the latter.…”
Section: New Ideas and Areasmentioning
confidence: 99%