Colossal photosensitive boost in Schottky diode behaviour with Ce-V2O5 interfaced layer of MIS structure

Balasubramani, V.; Chandrasekaran, J.; Nguyen, Tien Dai; Maruthamuthu, S.; Marnadu, R.; Vivek, P.; Sugarthi, S.

doi:10.1016/j.sna.2020.112333

Cited by 53 publications

(9 citation statements)

References 51 publications

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“…The photodiodes with high detectivities can be used in optoelectronic communication systems. For at -5 V and under 100 mW/cm 2 light power condition, the D* value of the SMA-photodiode was calculated as 1.33×10 10 Jones and this value is in accordance with some recently reported literature values [28,44,48,49].…”

Section: Intensity (Au) 2q (°)supporting

confidence: 89%

“…The ideality factor n of the CuAlNi/n-Si/Al photodiode was computed as 12.5 for darkness condition and 13.3 for 100 mW/cm 2 power of illuminated condition and these n values are higher than the ideal value (n=1). The deviations occurring in n values from the value of ideal one (1) are attributed to the influences of non-uniform distribution of charges in the interface, interface states, impurities, the inhomogeneity of SBH across the junction [28,43,44]. The value of the SBH (ϕb) for the signalized photodiode consisting thin-film CuAlNi SMA top-layer can be calculated by using the following formula [28];…”

Section: Intensity (Au) 2q (°)mentioning

confidence: 99%

“…The better the photodiode can absorb light, the greater its photosensitivity. A formula [28,44] to determine the %PS photosensitivity parameter is given as %PS = [(Iph -Id)×100]/Id , where Id is dark current. For at -5 V and under 100 mW/cm 2 light power condition, the photosensitivity %PS value of the SMA-photodiode was found as 18693 and this value is consistent with some recent literature values [28,44,48].…”

Section: Intensity (Au) 2q (°)mentioning

confidence: 99%

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Photo-electrical Characterization of New CuAlNi/n-Si/Al Schottky Photodiode Fabricated by Coating Thin-Film Smart Material

Karaduman¹,

Canbay

2022

Turkish Journal of Science and Technology

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Micro/nano scale thin-film shape memory alloys (SMAs) have been used in many different miniaturized systems. Using them as thin-film metal components in fabrication of Schottky photodiodes has started a few years ago. In this work, a new SMA-photodiode device with CuAlNi/n-Si/Al structure was produced by coating nano-thick CuAlNi SMA film on n-Si wafer by thermal evaporation. The photoelectrical I-V, I-t and C-V photodiode characterization tests were carried out at room temperature under dark and different artifical light power intensities. It was observed that the new device exhibited photoconductive, photovoltaic and capacitive behaviors. By using the obtained data, the ideality factor (n) and barrier height (ϕb) were determined by conventional I-V method. The photodiode performance parameters of responsivity (Rph), photosensivity (%PS) and spesific detectivity (D*) were determined as good figure of merits. The current conduction mechanism analysis revealed that the space charge limited conduction (SCLC) mechanism is the dominant current conduction mechanism. By the drawn reverse squared C-2-V plots, the values of donor concentration (ND), diffusion potential (Vd), Fermi level (EF) and also barrier height (ϕb) were determined for the SMA-photodiode. The results indicated that the new SMA-photodiode device can be useful in optoelectronic communication systems and photosensing applications.

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Section: Intensity (Au) 2q (°)supporting

confidence: 89%

Section: Intensity (Au) 2q (°)mentioning

confidence: 99%

Section: Intensity (Au) 2q (°)mentioning

confidence: 99%

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Photo-electrical Characterization of New CuAlNi/n-Si/Al Schottky Photodiode Fabricated by Coating Thin-Film Smart Material

Karaduman¹,

Canbay

2022

Turkish Journal of Science and Technology

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“…The photocommunication system uses a light source to transmit data [21][22][23] and a photodetector is the receiving unit. [24][25][26] Replacing the photodetector with a TPV device can reduce energy consumption, increase transparency, and offer photodetection over a wide range of frequencies. The omnidirectionality, high signal-to-noise ratio (high photosensitivity), and self-biased behavior of TPV windows are imperative for efficient photocommunication.…”

Section: Introductionmentioning

confidence: 99%

Flexible and Transparent Photovoltaic‐Based Broadband Photocommunication Window

Kumar

Lee

Patel

et al. 2023

Advanced Sustainable Systems

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Smart buildings and near‐zero‐energy buildings require building integrated photovoltaic systems to minimize energy consumption and achieve photocommunication. Windows can be the next replaceable entity in smart buildings with smart photocommunication windows. It can provide a novel means of wireless and secured communication. The transparent photovoltaics (TPV) based photocommunication window can also produce on‐site power to provide power to run applications of internet of things. A TPV device can be used as the receiver to collect the encoded signals, and its physical flexibility is imperative to its installation on any curved surfaces. In this work, a Ga2O3/Cu2O heterojunction‐based flexible TPV (FTPV) that acts as a photocommunication window to sense Morse code‐embedded photosignals is developed and power is produced. The FTPV provides a high open‐circuit voltage of 613 mV with an average visible transmittance of 52.3%. The device is capable of detecting broadband photoresponses in the range from UV to NIR. The FTPV also remains highly robust after a number of cycles of bending and continues to record Morse code signals over a wide range of broadband photosignals. It also has an ultra‐UV‐blocking feature that makes it suitable for use to prevent chronic diseases caused by exposure to UV radiation.

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“…Metal-semiconductor (MS) contacts take place in many areas in the developing electronics industry. Schottky diodes obtained from MS contacts in the electronics industry are used in many areas such as solar cells, microwave mixer detectors, varactors (capacitors whose capacities change with the applied voltage), fast switch applications (Balasubramani et al, 2020).…”

Section: Introductionmentioning

confidence: 99%

Investigation of I-V-T Charactersitics of Cr/Indigo Carmine/p-Si/Al Heterojunction Diode

Deniz

2021

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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The subject of this study is the use of Indigo Carmine (IC) material in Schottky diode application. The p-Si crystal was chosen as the base material for diode fabrication. One surface of the p-Si metal was coated with Al metal by thermal evaporation method. Indigo carmine interface material was coated on the other surface of p-Si by spin coating method. Finally, Cr metal was coated on this material with DC sputtering method. So we obtained refence Cr/p-Si/Al diode and Cr/IC/p-Si/Al heterojunctions diode. When the current-voltage (I-V) measurements of these diodes at room temperature were examined, it was determined that the Indigo Carmine material improved the diode parameters. It was determined from the I-V measurements of the Cr/IC/p-Si/Al diode for different temperatures that the ideality factor (n) decreased and the barrier height (Φb) value increased with the increasing temperature. These changes with temperature have been attributed to the inhomogeneous distribution in the potential barrier. In addition, the change of diode parameters with temperature showed that the diode has a double Gaussian distribution.

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Colossal photosensitive boost in Schottky diode behaviour with Ce-V2O5 interfaced layer of MIS structure

Cited by 53 publications

References 51 publications

Photo-electrical Characterization of New CuAlNi/n-Si/Al Schottky Photodiode Fabricated by Coating Thin-Film Smart Material

Photo-electrical Characterization of New CuAlNi/n-Si/Al Schottky Photodiode Fabricated by Coating Thin-Film Smart Material

Flexible and Transparent Photovoltaic‐Based Broadband Photocommunication Window

Investigation of I-V-T Charactersitics of Cr/Indigo Carmine/p-Si/Al Heterojunction Diode

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