Photo-electrical Characterization of New CuAlNi/n-Si/Al Schottky Photodiode Fabricated by Coating Thin-Film Smart Material

Abstract

Micro/nano scale thin-film shape memory alloys (SMAs) have been used in many different miniaturized systems. Using them as thin-film metal components in fabrication of Schottky photodiodes has started a few years ago. In this work, a new SMA-photodiode device with CuAlNi/n-Si/Al structure was produced by coating nano-thick CuAlNi SMA film on n-Si wafer by thermal evaporation. The photoelectrical I-V, I-t and C-V photodiode characterization tests were carried out at room temperature under dark and different artifical light power intensities. It was observed that the new device exhibited photoconductive, photovoltaic and capacitive behaviors. By using the obtained data, the ideality factor (n) and barrier height (ϕb) were determined by conventional I-V method. The photodiode performance parameters of responsivity (Rph), photosensivity (%PS) and spesific detectivity (D*) were determined as good figure of merits. The current conduction mechanism analysis revealed that the space charge limited conduction (SCLC) mechanism is the dominant current conduction mechanism. By the drawn reverse squared C-2-V plots, the values of donor concentration (ND), diffusion potential (Vd), Fermi level (EF) and also barrier height (ϕb) were determined for the SMA-photodiode. The results indicated that the new SMA-photodiode device can be useful in optoelectronic communication systems and photosensing applications.

Photodiode behavior and capacitive performance of ZnO nanoflakes synthesized by electrochemical deposition

“…While the highest determined responsivity value is 0.49 mA W −1 , the highest detectivity value is 2.69 × 10 9 Jones for 10 mW cm −2 light power density. The obtained results are in good agreement with Schottky-type photodiodes [41][42][43].…”

Smart alloy metalized novel photonic NEMS photodiode with CuAlV/n-Si/Al junction structure

“…In recent years, Cu-based shape memory alloys (SMAs) [1][2][3][4], the second important SMA group in the class of smart materials family after the superior NiTi SMAs [5][6][7], were successfully utilized as thin film nanolayers of top Schottky metal contact electrodes (which were aimed to have a dynamic electro-mechanical martensite nanostructure based shape memory effect function, good electrical conductivity, and new metal work function values different than those of usual elemental metals) in the fabrication of some new high-performance silicon photodiodes [8][9][10][11][12][13][14][15][16] which can be also regarded as micro/nano M/NEMSs [17][18][19] type new devices, actuators or sensors with photonic features.…”

“…However, the prior purpose of using Cu-based SMA thin films is to benefit from the wider composition-tunable work function and better electrical conductivity of Cu-based SMAs, as compared to equatomic NiTi thin films. However, the Cu-based SMAs utilized as Schottky contact metal films in the fabrication of SMA-photodiodes [8][9][10][11][12][13][14][15][16] have not yet reached an adequate number and diversity for comprehensive research on these devices and to fabricate them with higher photodiode performances and more different optoelectronic properties. There is no photodiode work using CuAlV made until now in the literature.…”

“…Therefore, in this work, it was aimed to fabricate a new SMA-photodiode using CuAlV SMA which is different than the Cu-based SMAs used in previous works. Therefore, the new state-of-the-art SMAphotodiode is expected to have some different or improved optoelectronic and performance properties than those of similar SMA-photodiodes [8][9][10][11][12][13][14][15][16].…”

Novel Quaternary CuAlZnMg High Temperature Shape Memory Alloy (HTSMA) Fabricated by Minor Batch of Zn and Mg Additions

“…These exceptional behaviors of SMAs based on martensitic phase transformation are defined as their unique properties of shape memory effect (SME) and superelasticity (SE) [5][6][7]. These versatile alloys have already been utilized for their SME, SE and some other properties in numerous applications including actuator, automotive, aerospace, medical, robotics, micro/nano electromechanical systems (M/NEMS) and photodetectors [6,[8][9][10][11][12][13][14][15][16][17][18][19].…”