Investigation of I-V-T Charactersitics of Cr/Indigo Carmine/p-Si/Al Heterojunction Diode

Abstract

The subject of this study is the use of Indigo Carmine (IC) material in Schottky diode application. The p-Si crystal was chosen as the base material for diode fabrication. One surface of the p-Si metal was coated with Al metal by thermal evaporation method. Indigo carmine interface material was coated on the other surface of p-Si by spin coating method. Finally, Cr metal was coated on this material with DC sputtering method. So we obtained refence Cr/p-Si/Al diode and Cr/IC/p-Si/Al heterojunctions diode. When the current-voltage (I-V) measurements of these diodes at room temperature were examined, it was determined that the Indigo Carmine material improved the diode parameters. It was determined from the I-V measurements of the Cr/IC/p-Si/Al diode for different temperatures that the ideality factor (n) decreased and the barrier height (Φb) value increased with the increasing temperature. These changes with temperature have been attributed to the inhomogeneous distribution in the potential barrier. In addition, the change of diode parameters with temperature showed that the diode has a double Gaussian distribution.