Colloidal solutions of niobium trisulfide and niobium triselenide

Fedorov, V. E.; Artemkina, S. B.; Grayfer, Ekaterina D.; Наумов, Н. Г.; Mironov, Yuri V.; Булавченко, А. И.; Зайковский, В. И.; Antonova, I. V.; Komonov, A. I.; Medvedev, M. V.

doi:10.1039/c4tc00459k

Cited by 36 publications

(22 citation statements)

References 56 publications

(71 reference statements)

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“…The highest concentration was reached for isopropanol dispersion (about 310 mg L −1 ; Table 2). Also, an ethanol/water mixture produced good dispersions, being more effective than ethanol or water individually, which was in agreement with previous observations on other chalcogenides, such as MoS 2 21 and NbS 3 15a. At the same time, N ‐methylpyrrolidone (NMP), a well‐established solvent for layered materials, did not produce any dispersion of chain‐structured VS 4 .…”

Section: Resultssupporting

confidence: 90%

Synthesis, Crystal Structure, and Colloidal Dispersions of Vanadium Tetrasulfide (VS₄)

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Mironov

Grayfer

et al. 2015

Chemistry A European J

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Although many of the layered metal chalcogenides, such as MoS2, are well-studied, some other chalcogenides have received less attention by comparison. In particular, there has been an emerging interest in vanadium tetrasulfide (VS4), which displays useful properties as a component of hybrids. However, the synthetic methods and characteristics of individual VS4 are not yet well defined, and there is no report on its solution processability. Here we have synthesized VS4 by a simple and fast direct reaction between elements. Reinvestigation of the VS4 crystal structure yielded more precise atomic coordinates and interatomic distances, thereby confirming the crystallization of VS4 in the monoclinic C2/c group and its quasi-1D chainlike structure. As the chains in VS4 are only bonded by weak van der Waals forces, we further demonstrate that bulk VS4 may be ultrasonically dispersed in appropriate solvents to form colloids, similarly to the layered chalcogenides. VS4 particles in colloids retain their phase identity and rod-shaped morphology with lengths in the range of hundreds of nanometers. Isopropanol dispersion exhibited the highest concentration and stability, which was achieved owing to the repulsion caused by high negative charges on the edges of the particles.

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Section: Resultssupporting

confidence: 90%

Synthesis, Crystal Structure, and Colloidal Dispersions of Vanadium Tetrasulfide (VS₄)

Козлова

Mironov

Grayfer

et al. 2015

Chemistry A European J

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“…This synthesis temperature is comparable to temperatures used to prepare NbS 3 -i, 11,27,34 and the only difference here is the use of I 2 as a transport agent. This NbS 3 polymorph crystallizes in a monoclinic unit cell, and the structure was solved using space group P2 1 /c.…”

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confidence: 72%

“…The spectrum of NbS 3 -iv is similar but not identical to data published for NbS 3 -i. 11,[39][40][41] The specific differences are (1) the relative intensities of the two peaks at 145-155 nm are switched and (2) show that the morphology of NbS 3 -iv and NbS 3 -v is fibrous. NbS 3 -iv crystals generally appear as wider, straight fibers, whereas NbS 3 -v crystals look more like flexible wires.…”

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confidence: 99%

Monoclinic structures of niobium trisulfide

et al. 2017

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Two new polymorphs of niobium trisulfide are established by single crystal x-ray diffraction. NbS3-iv crystallizes in the monoclinic space group P21/c with lattice parameters a = 6.7515(5) Å, b = 4.9736(4) Å, c = 18.1315(13) Å, and β = 90.116(2)°. Its structure is based on chains of [NbS6] trigonal prisms containing Nb–Nb pairs with a bond length of 3.0448(8) Å; this pairing causes the chains to corrugate slightly along their axis, a feature also present in triclinic NbS3-i that leads to semiconductor properties. The stacking arrangement of chains is different in these polymorphs, however, with NbS3-i having an ABCDE repeating sequence of chain bilayers and NbS3-iv having an AB repeating sequence. HRTEM studies show the presence of topotactically-oriented intergrown zones and numerous dislocations, which result in mosaic structuring. A second new polymorph, NbS3-v, crystallizes in the monoclinic space group P21/m with lattice parameters a = 4.950(5) Å, b = 3.358(4) Å, c = 9.079(10) Å, β = 97.35(2)°. In contrast to NbS3-iv, NbS3-v maintains fixed a Nb–Nb bond distance of 3.358(4) Å along the chains, and it has an ABCDE repeating sequence of chain bilayers similar to NbS3-i. High resolution scanning transmission electron microscopy (HR-STEM) imaging of an exfoliated NbS3-v nanoribbon shows the continuous [NbS6] chains oriented along the b-axis. These results provide the first firmly established structural data for monoclinic NbS3. In addition, SEM images show the formation of NbS3 rings and cylinders, and a combination of powder x-ray diffraction and Raman spectroscopy provides a way to distinguish between NbS3 polymorphs.

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“…Further colloidal dispersions have been achieved for TaS3 in MeCN and DMSO 142 , and for NbS3 and NbSe3. 143,144 Figure 5 …”

Section: Isolation and Exfoliation Of Mx3 Crystalsmentioning

confidence: 99%

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

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The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

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Colloidal solutions of niobium trisulfide and niobium triselenide

Abstract: Bulk NbS3and NbSe3were stably dispersed in a number of organic solvents to yield colloids containing thin well-crystallized nanoribbons of NbS3and NbSe3.

Cited by 36 publications

References 56 publications

Synthesis, Crystal Structure, and Colloidal Dispersions of Vanadium Tetrasulfide (VS₄)

Synthesis, Crystal Structure, and Colloidal Dispersions of Vanadium Tetrasulfide (VS₄)

Monoclinic structures of niobium trisulfide

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

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Colloidal solutions of niobium trisulfide and niobium triselenide

Abstract: Bulk NbS3and NbSe3were stably dispersed in a number of organic solvents to yield colloids containing thin well-crystallized nanoribbons of NbS3and NbSe3.

Cited by 36 publications

References 56 publications

Synthesis, Crystal Structure, and Colloidal Dispersions of Vanadium Tetrasulfide (VS4)

Synthesis, Crystal Structure, and Colloidal Dispersions of Vanadium Tetrasulfide (VS4)

Monoclinic structures of niobium trisulfide

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

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Synthesis, Crystal Structure, and Colloidal Dispersions of Vanadium Tetrasulfide (VS₄)

Synthesis, Crystal Structure, and Colloidal Dispersions of Vanadium Tetrasulfide (VS₄)