Colloidal Quantum Dot Solar Cells

Carey, Graham H.; Abdelhady, Ahmed L.; Ning, Zhijun; Thon, Susanna M.; Bakr, Osman M.; Sargent, Edward H.

doi:10.1021/acs.chemrev.5b00063

Cited by 1,016 publications

(877 citation statements)

References 234 publications

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“…Recently, PbS QDs have attracted attention for NIR detection applications because of their inherent narrow (1.3 eV)23 and tunable bandgap altered with size and composition 24, 25, 26. The broadening of sensitive spectral range of ZnO NWs by combination with PbS QDs has been demonstrated in solar cells 27.…”

Section: Introductionmentioning

confidence: 99%

An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

et al. 2016

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ZnO nanostructure‐based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV–vis–NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV–vis–NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

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Section: Introductionmentioning

confidence: 99%

An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

et al. 2016

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“…4D scanning ultrafast electron microscopy, surface traps, charge carrier dynamics, CIGSe, semiconductor nanocrystals, shelling 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 3 With their manifold tunable properties and cost-effective versatile chemical processability, research in colloidal semiconductor nanocrystals (NCs) have spanned from vast materials systems to their widespread applications in light emitting diodes, sensors and light harvesters. [1][2][3][4][5][6][7][8][9][10] However, due to high surface-to-volume ratio of these NCs, the large number of unpassivated atoms on their surfaces lead to the formation of highly dense trap states, which serve as undesirable, non-radiative deactivation channels for photo-generated charge carriers. [11][12][13][14][15] This often acts as a bottleneck in the use of these NCs for photoactive applications.…”

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confidence: 99%

Real-Space Mapping of Surface Trap States in CIGSe Nanocrystals Using 4D Electron Microscopy

et al. 2016

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Surface trap states in copper indium gallium selenide semiconductor nanocrystals (NCs), which serve as undesirable channels for nonradiative carrier recombination, remain a great challenge impeding the development of solar and optoelectronics devices based on these NCs. In order to design efficient passivation techniques to minimize these trap states, a precise knowledge about the charge carrier dynamics on the NCs surface is essential. However, selective mapping of surface traps requires capabilities beyond the reach of conventional laser spectroscopy and static electron microscopy; it can only be accessed by using a one-of-a-kind, second-generation four-dimensional scanning ultrafast electron microscope (4D S-UEM) with subpicosecond temporal and nanometer spatial resolutions. Here, we precisely map the collective surface charge carrier dynamics of copper indium gallium selenide NCs as a function of the surface trap states before and after surface passivation in real space and time using S-UEM. The time-resolved snapshots clearly demonstrate that the density of the trap states is significantly reduced after zinc sulfide (ZnS) shelling. Furthermore, the removal of trap states and elongation of carrier lifetime are confirmed by the increased photocurrent of the self-biased photodetector fabricated using the shelled NCs.

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“…Furthermore, while all three reports use different materials and/or material structures, they broadly follow the conventional PV device concept of a depleted heterojunction. As the latter architectural considerations of conventional QD-based solar cells are not within the focus of this review, we refer the interested reader to other articles provided in the literature [106][107][108].…”

Section: Meg In Qd-based Solar Cellsmentioning

confidence: 99%

“…In a conventional QD-based solar cell, the voltage is mainly defined by the quasi-Fermi level splitting between the (mostly p-type) QD donor and the (n-type) MO acceptor at the p-n junction [82,108]. The increased n-type doping density of the QD film introduced by the hydrazine ligands reduces this splitting and consequently lowers the extractable photovoltage.…”

Section: Tailoring the Qd Ligand Chemistrymentioning

confidence: 99%

Multiple exciton generation in quantum dot-based solar cells

et al. 2017

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Multiple exciton generation (MEG) in quantumconfined semiconductors is the process by which multiple bound charge-carrier pairs are generated after absorption of a single high-energy photon. Such charge-carrier multiplication effects have been highlighted as particularly beneficial for solar cells where they have the potential to increase the photocurrent significantly. Indeed, recent research efforts have proved that more than one chargecarrier pair per incident solar photon can be extracted in photovoltaic devices incorporating quantum-confined semiconductors. While these proof-of-concept applications underline the potential of MEG in solar cells, the impact of the carrier multiplication effect on the device performance remains rather low. This review covers recent advancements in the understanding and application of MEG as a photocurrent-enhancing mechanism in quantum dot-based photovoltaics.

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Colloidal Quantum Dot Solar Cells

Abstract: Figure 7. Schematic representation of the system for spray-coating colloidal quantum dot films. Reprinted with permission from ref 117.

Cited by 1,016 publications

References 234 publications

An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

Real-Space Mapping of Surface Trap States in CIGSe Nanocrystals Using 4D Electron Microscopy

Multiple exciton generation in quantum dot-based solar cells

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