2017
DOI: 10.1515/nanoph-2017-0034
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Multiple exciton generation in quantum dot-based solar cells

Abstract: Multiple exciton generation (MEG) in quantumconfined semiconductors is the process by which multiple bound charge-carrier pairs are generated after absorption of a single high-energy photon. Such charge-carrier multiplication effects have been highlighted as particularly beneficial for solar cells where they have the potential to increase the photocurrent significantly. Indeed, recent research efforts have proved that more than one chargecarrier pair per incident solar photon can be extracted in photovoltaic d… Show more

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Cited by 64 publications
(41 citation statements)
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References 144 publications
(258 reference statements)
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“…Important studies reveal many novel and interesting experimental and theoretical results on LDSs exhibiting high quantum yield as a result of MEG occurrence with the aim of the improvement of the solar devices field. Considering that Shockley and Queisser determined a basic threshold value for the efficiency of a traditional p-n solar cell of 30%, these essential results prove that there is a possibility to exceed the Shockley-Quiesser threshold employing quantum effects for a recently developed low-cost third-generation solar cell [77,[128][129][130].…”
Section: Excitons and Biexcitons In Zero-dimensional Semiconductor Stmentioning
confidence: 81%
“…Important studies reveal many novel and interesting experimental and theoretical results on LDSs exhibiting high quantum yield as a result of MEG occurrence with the aim of the improvement of the solar devices field. Considering that Shockley and Queisser determined a basic threshold value for the efficiency of a traditional p-n solar cell of 30%, these essential results prove that there is a possibility to exceed the Shockley-Quiesser threshold employing quantum effects for a recently developed low-cost third-generation solar cell [77,[128][129][130].…”
Section: Excitons and Biexcitons In Zero-dimensional Semiconductor Stmentioning
confidence: 81%
“…However, their contribution to the photovoltaic PCE is still modest resulting from the low MEG efficiency (η MEG ) and high MEG threshold energy ( E th ≈ 3 E g ). [ 46,75,81 ] The relationship between these variables is expressed as following [ 82,83 ] Eth=Eg+εex ηMEG=Egεex εex=hvEgQY1 where ε ex is the required excess energy for each e–h generation and E g is the semiconductor bandgap. The ε ex is determined by the exciton quantum yield (QY), which represents the number of e–h pairs excited by one photon with energy hv > 2E g , where h is Planck's constant and v is the photon frequency.…”
Section: Unique Pnc Propertiesmentioning
confidence: 99%
“…Recently, a remarkably high detectivity of ~1.8 × 10 13 Jones at 1.3 µm has been reported in PbS CQD-based photodetectors [35]. Most importantly, a unique feature, “multiexciton generation”, during light absorption has been explored in CQD-based photodetectors [71,72], which has resulted in optical gain efficiency more than unity [73,74].…”
Section: Nanostructured Ir Sensitive Materials For Photodetectorsmentioning
confidence: 99%