Collection and sputtering experiments with noble gas ions

Almén, O.; Bruce, G.

doi:10.1016/0029-554x(61)90026-x

Cited by 407 publications

(53 citation statements)

References 10 publications

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“…As a test of the program, "thick.c" results for S(E) for 4 He on Tantalum were found to match those of Sputterrate.for and the experimental results for 20 Ne implanted in several substrates by Almen and Bruce were found to be within 40% of the calculated values from "thick.c" [6]. Therefore the calculation for S(E) is within an order of magnitude of experiment.…”

Section: S N N 3 R T T P a D 'Erssupporting

confidence: 53%

“…There is virtually no data for this reaction available in the region of importance to nuclear fusion and astrophysics. T 20 (0 0 ) at 240 keV [2] and at 340 keV [3] and T 20 (6) at 340 keV [4] are the only existing analyzing power data. Thus a comprehensive study of the analyzing power of 3He(d,p) would be beneficial, and could give us an analyzer with a higher efficiency than the currently used reactions.…”

Section: S N N 3 R T T P a D 'Ersmentioning

confidence: 99%

“…Tantalum foil was chosen as the best host material based upon a theoretical comparison of saturation thicknesses calculated using the C code "thick.c" (Appendix B) which uses the zero order approximation [5], [6]. This approximation of saturation thickness assumes that the maximum retained dose depends only on sputtering [3], [16].…”

Section: S N N 3 R T T P a D 'Ersmentioning

confidence: 99%

See 2 more Smart Citations

Ion Implantation of 3He in Tantalum for Use in a Low Energy Deuteron Polarization Analyzer

Hird¹,

Fletcher²,

Ludwig³

et al. 1994

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Section: S N N 3 R T T P a D 'Erssupporting

confidence: 53%

Section: S N N 3 R T T P a D 'Ersmentioning

confidence: 99%

Section: S N N 3 R T T P a D 'Ersmentioning

confidence: 99%

See 1 more Smart Citation

Ion Implantation of 3He in Tantalum for Use in a Low Energy Deuteron Polarization Analyzer

Hird¹,

Fletcher²,

Ludwig³

et al. 1994

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“…4 can be used to determine the variation of the total sputtering yield Y tot as a function of the nuclearity of the primary ion. Using a literature value for the self-sputtering yield of silver under 8-keV Ag ion bombardment [14], we obtain total sputtering yield values depicted in Fig. 5.…”

Section: Resultsmentioning

confidence: 99%

Cluster formation under bombardment with polyatomic projectiles

Heinrich

Wucher

2000

Nuclear Instruments and Methods in Physics Research Section B:

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We describe a new tandem mass spectrometer which has been designed to investigate sputtering phenomena at solid surfaces under bombardment with polyatomic projectile ions with particular emphasis on the detection of neutral atoms and clusters ejected from the surface. The primary ions are generated in a cluster ion source which is based on pulsed laser ionization of neutral particles sputtered from another solid surface bombarded with 5-keV Xe ions. In order to characterize the sputtering processes initiated by these ions, neutral atoms and clusters ejected from the target surface are analyzed by means of single photon ionization using an intense pulsed VUV laser in a second, re¯ectron type timeof-¯ight (ToF) mass spectrometer. We report on ®rst results obtained with this instrument regarding the self-sputtering of a polycrystalline silver surface under bombardment with 8-keV atomic silver ions and polyatomic silver cluster ions. More speci®cally, the yields of neutral Ag n clusters with n 1Y F F F Y 4 as well as the variation of the total sputtering yield have been determined using Ag , Ag 2 and Ag 3 projectile ions. Ó

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“…1 In particular, ion implantation of oxygen ions at elevated temperatures to doses in the range of 0.4-2ϫ10 18 cm Ϫ2 is used in industrial scale for the synthesis of buried silicon dioxide, in the so-called separation by implanted oxygen materials. 2 It was previously demonstrated that implantation of c-Si with Si ϩ or O ϩ at elevated temperatures leads to formation of two distinct layers: a dislocation free near-surface layer, which presents mechanical strain of contraction, and a highly dislocated layer located around the region of the end of range of the ions.…”

Section: Introductionmentioning

confidence: 99%

Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures

Cima

Boudinov

Souza

et al. 2000

Journal of Applied Physics

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The development of mechanical strain and accumulation of damage in silicon single crystals implanted with Ne ions to doses in the range of 0.1-1.0 ϫ10 17 cm Ϫ2 at temperatures from 200 to 600°C were investigated employing Rutherford backscattering spectrometry, high resolution x-ray diffraction ͑HRXRD͒ analysis and cross section transmission electron microscopy ͑XTEM͒. Two distinct layers have been found in the implanted material: A near-surface layer (Ͻ 0.2 m thick͒ where no extended defects are observed and a buried layer (Ϸ0.5 m thick͒ containing a dense array of dislocation loops and defect clusters. XTEM analysis revealed a distribution of small spherical cavities presumably filled with Ne, with a diameter Ͻ4 nm, extending along the entire depth of the implanted layer. HRXRD studies showed the presence of a positive strain ͑of expansion͒, irrespective of the implanted dose and temperature. The findings are discussed in terms of the proposed model which assumes that vacancy-type defects are consumed during the formation of Ne bubbles.

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Collection and sputtering experiments with noble gas ions

Cited by 407 publications

References 10 publications

Ion Implantation of 3He in Tantalum for Use in a Low Energy Deuteron Polarization Analyzer

Ion Implantation of 3He in Tantalum for Use in a Low Energy Deuteron Polarization Analyzer

Cluster formation under bombardment with polyatomic projectiles

Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures

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