The photoelectric effect has a sister process relevant in optoelectronics called internal photoemission [13]. Here an electron is photoemitted from a metal into a semiconductor [4,5]. While the photoelectric effect takes place within less than 100 attoseconds (1 as = 10 −18 seconds) [6,7], the attosecond time scale has so far not been measured for internal photoemission. Based on the new method CHArge transfer time MEasurement via Laser pulse duration-dependent saturation fluEnce determinatiON CHAMELEON , we show that the atomically thin semi-metal graphene coupled to bulk silicon carbide, forming a Schottky junction, allows charge transfer times as fast as (300±200) attoseconds. These results are supported by a simple quantum mechanical model simulation. With the obtained cut-off bandwidth of 3.3 PHz (1 PHz = 10 15 Hz) for the charge transfer rate, this semimetalsemiconductor interface represents a functional solid-state interface offering the speed and design space required for future light-wave signal processing.The transfer of charge via internal photoemission at a solid-state interface is a fundamental process with direct relevance in ultrafast optoelectronics [24] and the transduction of light to chemical or electrical energy in light-harvesting [811]. Various solid state-based interfaces have been investigated to study the ultimate speed of this fundamental process using optical methods [2,3,12,13]. Time constants for the charge transfer in the attosecond domain (∼100 as) have so far only been observed in photoemission from metal surfaces or atoms into vacuum [6,7,14] or from atoms/molecules to metals [1517]; part of these experiments infer the charge transfer rates based on the uncertainty principle [12,18]. Similarly, excited charges may oscillate within a molecule from one part of the molecule to another within hundreds of attoseconds [10]. In stark contrast, in materials relevant for fast electronics, such as layered heterostructures with atomically sharp interfaces, the hitherto fastest charge transfer time reported was about 7 fs * in a grapheneboron nitridegraphene layered heterostructures [12]. Achieving faster time scales has proven impossible so far because of the formation of excitons, which are bound states of the photo-generated electron-hole pair [2,8], or quantum mechanical backreflection [10], taking precedence over charge separation. The ideal system to achieve attosecond-fast charge separation at a solid-state interface resembles the photoelectric effect, so external photoemission from a metal into vacuum [6,7]: It is strongly asymmetric with only one side optically absorbing; it has an atomically sharp interface, reducing the electron transfer distance; in addition to its external counterpart it has a strong built-in electric field that promotes fast transfer of electrons into the electronabsorbing half-space, i.e., the acceptor material. Electron absorption at such an extended acceptor might preserve electronic coherence but hinders the carrier wavefunction to sling back to the donor ma...