Plasmon-induced hot-carrier transfer from a metal nanostructure to an acceptor is known to occur via two key mechanisms: (i) indirect transfer, where the hot carriers are produced in the metal nanostructure and subsequently transferred to the acceptor, and (ii) direct transfer, where the plasmons decay by directly exciting carriers from the metal to the acceptor. Unfortunately, an atomic-level understanding of the direct-transfer process, especially with regard to its quantification, remains elusive even though it is estimated to be more efficient compared to the indirect-transfer process. This is due to experimental challenges in separating direct from indirect transfer as both processes occur simultaneously at femtosecond timescales. Here, we employ timedependent density-functional theory simulations to isolate and study the direct-transfer process at a model metal-acceptor (Ag 147 -Cd 33 Se 33 ) interface. Our simulations show that, for a 10-femtosecond Gaussian laser pulse tuned to the plasmon frequency, the plasmon formed in the Ag 147 -Cd 33 Se 33 system decays within 10 fs and induces the direct transfer with a probability of about 40%. We decompose the direct-transfer process further and demonstrate that the direct injection of both electrons and holes into the acceptor, termed direct hot-electron transfer (DHET) and direct hot-hole transfer (DHHT), take place with similar probabilities of about 20% each. Finally, effective strategies to control and tune the probabilities of DHET and DHHT processes are proposed. We envision our work to provide guidelines toward the design of metal-acceptor interfaces that enable more efficient plasmonic hot-carrier devices.

Quantum computers promise to revolutionise molecular electronic simulations by overcoming the exponential memory scaling. While electronic wave functions can be represented using a product of fermionic unitary operators, the best ansatz for strongly correlated electronic systems is far from clear. In this contribution, we construct universal wave functions from gate-efficient, spin symmetry-preserving fermionic operators by introducing an algorithm that globally optimises the wave function in the discrete ansatz design and continuous parameter spaces. Our approach maximises the accuracy that can be obtained with near-term quantum circuits and provides a practical route for designing ansätze in the future. Numerical simulations for strongly correlated molecules, including water and molecular nitrogen, and the condensed-matter Hubbard model, demonstrate the improved accuracy of gate-efficient quantum circuits for simulating strongly correlated chemistry.

Quantum computers promise to revolutionise electronic simulations by overcoming the exponential scaling of many-electron problems. While electronic wave functions can be represented using a product of fermionic unitary operators, shallow quantum circuits for exact states have not yet been achieved. We construct universal wave functions from gate-efficient, symmetry-preserving fermionic operators by introducing an algorithm that globally optimises the wave function in the discrete ansatz design and the continuous parameter spaces. Our approach maximises the accuracy that can be obtained with near-term quantum circuits. Highly accurate numerical simulations on strongly correlated molecules, including water and molecular nitrogen, and the condensed-matter Hubbard model, demonstrate that our algorithm reliably advances the state-of-the-art, defining a new paradigm for quantum simulations featuring strong electron correlation.

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