Cofabrication of Planar Gunn Diode and HEMT on InP Substrate

Abstract

We present the cofabrication of planar Gunn diodes and high-electron mobility transistors (HEMTs) on an indium phosphide substrate for the first time. Electron beam lithography has been used extensively for the complete fabrication procedure and a 70-nm T-gate technology was incorporated for the enhancement of the small-signal characteristics of the HEMT. Diodes with anode-to-cathode separation (L ac ) down to 1-and 120-µm width were shown to oscillate up to 204 GHz. The transistor presents a cutoff frequency ( f T ) of 220 GHz, with power gain up to 330 GHz ( f max ). The integration of the two devices creates the potential for the realization of high-power, high-frequency MMIC Gunn oscillators, circuits, and systems.Index Terms-Gunn diode, high-electron mobility transistor (HEMT), integration, mm-wave.

Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP

“…Indium phosphide is one of the main semiconductor materials currently used for manufacturing Gunn diodes and field-effect transistors with high mobility -highelectron mobility transistor (HEMT) of millimeter and submillimeter wavelengths [1][2][3][4]. These devices are characterized with very small dimensions.…”

Ohmic contacts based on Pd to indium phosphide Gunn diodes

“…Indium phosphide is one of the most promising materials used to create the Gunn diodes and HEMT of millimeter and submillimeter bands [1][2][3][4][5][6]. The parameters of the active elements are essentially determined by the quality of initial InP and electrical and physical properties of ohmic contacts [7][8][9][10][11].…”