Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP

Abstract

Abstract. Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au-Ti-Pd-n + -InP and Au-Ti-Ge-Pd-n + -InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n + -n-n ++ -n +++ -InP epitaxial structure heated to 300 °C. It has been theoretically and experimentally shown that within the temperature range 250…380 K the current transport mechanism in the ohmic contacts Au-Ti-Pd-n + -InP is thermal-field one, and in the ohmic contacts Au-Ti-Ge-Pd-n + -InP it is caused by conductivity along metal shunts linked with dislocations. According to the X-ray diffraction data, the density of these dislocations in the near-contact InP area is ~10 9 cm -2 .