Co-integration of resonant tunneling and double heterojunction bipolar transistors on InP

Seabaugh, Alan; Beam, Edward; Taddiken, A.H.; Randall, John N.; Kao, Yung-Chung

doi:10.1109/55.244734

Cited by 28 publications

(6 citation statements)

References 8 publications

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“…l resonant-tunneling diode (RTD) in series with the THETA. Using this layer arrangement, the RTHETA is formed from the full epitaxial structure, while the THETA is obtained by selectively removing the RTD prior to emitter deposition in a manner similar to that recently demonstrated for cointegrated resonant-tunneling bipolar transistors (RTBT's) and heterojunction bipolar transistors [8].…”

Section: Integration Of Resonant-tunneling Transistors and Hot-electrmentioning

confidence: 99%

Integration of resonant-tunneling transistors and hot-electron transistors

Moïse

Kao

Seabaugh

et al. 1994

IEEE Electron Device Lett.

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We have integrated a tunneling hot-electron transfer amplifier (THETA) and a novel resonant-tunneling hot-electron transfer ampliier (RTHETA) within a single epitaxial growth. At room temperature, the THETA exhibits a common-emitter current gain of greater than six and a voltage swing of 800 mV when measured in an inverter configuration. The RTHETA exhibits similar common-emitter current gain and a four-state voltage transfer characteristic with an output voltage swing of 1 V. In contrast to the resonant-tunneling hot-electron transistor (RHET), the RTHETA exhibits current gain both before and after the resonant peak voltage. From on-wafer S-parameter measurements, the current-gain cut-off frequency ( f~) and the 0 100 200 300 maximum frequency of oscillation (fmax) for both transistors are approximately 20 GHz and 9 GHz, respectively. Position (nm) (a) ESONANT-tunneling hot-electron transistors (RHET's) R are of interest because of their potential application in high-speed circuits and their increased functionality when compared to conventional transistors [ 11, [2]. For example, a seven-transistor, RHET-based full-adder integrated circuit, operating at 77 K, replaces approximately four times the number of conventional bipolar transistors required to perform the same function [ 3 ]. In addition to this low-temperature result, room-temperature operation of a single-RHET integrated circuit that performs an exclusive-NOR logical function has also been reported [4]. While, at room-temperature, the RHET is an effective switching device, its common-emitter current gain is presently limited to a small voltage range near resonance which significantly reduces its utility in amplifier applications [5]. Thus, to further advance room-temperature hot-electron integrated circuit technology, it is necessary to develop a hot-electron buffer amplifier that both provides the requisite fan out for circuit applications and directly integrates with resonant-tunneling transistors. Towards this goal, we demonstrate the integration of a recently demonstrated roomtemperature tunneling hot-electron transfer amplifier (THETA)[6] with a novel type of resonant-tunneling hot-electron transfer amplifier (RTHETA) within a single epitaxial growth.A computed conduction energy band diagram [7] and a schematic device cross-section for the integrated transistors are shown in Fig. l(a) and l(b), respectively. As seen in Fig. l(a), the RTHETA is comprised of a pseudomorphic InGaAs/AlAs

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Section: Integration Of Resonant-tunneling Transistors and Hot-electrmentioning

confidence: 99%

Integration of resonant-tunneling transistors and hot-electron transistors

Moïse

Kao

Seabaugh

et al. 1994

IEEE Electron Device Lett.

Self Cite

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“…It falls into two kinds: one is gate RTT, whose I-V characteristics can be controlled by the third terminal -gate terminal based on the RTD structure [2,3] and the other is compound RTT, whose DBS structure is combined with another high frequency three terminals device, such as HEMT [4], MESFET [5], HBT [6].…”

Section: Introductionmentioning

confidence: 99%

The design and fabrication on gate type resonant tunneling transistor

Guo

Liang

Song

et al. 2008

Front. Electr. Electron. Eng. Ch

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In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully. A systematic depiction centers on the designs of material structure, device structure, photolithography mask, fabrication of device and the measurement and analysis of parameters. The fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 mS. The work lays the foundation for further improvement on the performance and parameters of RTT.

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“…0018-9219/98$10.00 © 1998 IEEE The cointegration of resonant tunneling devices and GaAs transistors [4], [5] has made feasible several novel, highperformance digital logic families. Table 1 compares some conventional silicon and GaAs-based technologies with RTD-based technologies that use similar feature sizes and device dimensions.…”

Section: Introductionmentioning

confidence: 99%