Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [100] in solid source molecular beam epitaxy

Cheah, W.K.; Fan, Wenhui; Yoon, S. F.; Liu, R.; Wee, Andrew Thye Shen

doi:10.1016/j.jcrysgro.2004.03.057

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“…At higher doping levels, the sheet resistance tends to saturate due to the decrease of mobility. It has been previously shown that carrier concentration and mobility strongly depend on the growth parameters such as growth temperature, V/III flux ratio and growth rate [8,9]. We have then studied the influence of the growth temperature on the transport properties of GaAsSb.…”

Section: Resultsmentioning

confidence: 99%

MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications

Yarekha

Godey

Wallart

et al. 2007

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications

Yarekha

Godey

Wallart

et al. 2007

Journal of Crystal Growth

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Photodissociation dynamics of CBr4 at 267nm by means of ion velocity imaging

Greene

Francisco

et al. 2006

The Journal of Chemical Physics

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The photodissociation dynamics of CBr4 at 267 nm has been studied using time of flight (TOF) mass spectrometry and ion velocity imaging techniques. The photochemical products are detected with resonance enhanced multiphoton ionization (REMPI) as well as single-photon vacuum ultraviolet ionization at 118 nm. REMPI at 266.65 and 266.71 nm was used to detect the ground Br(2P32) and spin-orbit excited Br(2P12) atoms, respectively. The translational energy and angular distributions are consistent with direct dissociation from an excited triplet state and indirect dissociation from high vibrational levels on the singlet ground state surface. Br2+ ions are also observed in the TOF spectra with a focused 267 nm laser. The counter fragment, CBr2+, is observed when this photolysis laser is unfocused, and photons at 118 nm are used to ionize the radical products. The translational energy distributions of the CBr2+ and Br2+ products can be momentum matched, which indicates that molecular Br2 elimination is one of the primary dissociation channels.

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Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [100] in solid source molecular beam epitaxy

Cited by 2 publications

References 25 publications

MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications

MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications

Photodissociation dynamics of CBr4 at 267nm by means of ion velocity imaging

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