CMP of hard disk substrate using a colloidal SiO2 slurry: preliminary experimental investigation

Lei, Hong; Luo, Jianbin

doi:10.1016/j.wear.2004.01.017

Cited by 127 publications

(71 citation statements)

References 32 publications

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“…Chemical mechanical polishing (CMP) has become a more essential surface machining technology in the manufacturing of semiconductor and computer hard disks driver (Lei and Luo, 2004;Lei et al, 2006;Qi and Lee, 2010;Zhang et al, 2010). In CMP, planarization is achieved by the chemical and mechanical function between the wafer, pad and slurry (Zantye et al, 2004;Lee et al, 2010;Aksu et al, 2003).…”

Section: Introductionmentioning

confidence: 99%

“…In CMP, abrasive is one of key influencing factors on the polished surface quality. In CMP slurries, two types of abrasives are adopted usually: the traditional inorganic particles (silica particles, alumina particles, ceria particles) (Lei and Luo, 2004;Lei et al, 2006;2005;Myoung-Hwan Oh et al, 2011) and the composite particles (Chen et al, 2011;Lei et al, 2008;2010a;2010b). But all kinds of abrasives mentioned above are solid particles which are easy to cause polishing scratches.…”

Section: Introductionmentioning

confidence: 99%

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Preparation and Polishing Properties of Spherical Porous Silica Abrasive

Lei¹

2010

American Journal of Nanotechnology

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Problem statement: Abrasive is one of key influencing factors on the polished surface quality in Chemical Mechanical Polishing (CMP). Solid abrasives in CMP slurries are easy to cause polishing scratches. It is well known that reducing the hardness of abrasives would improve the polished surface quality. Therefore, the change in structure or shape of the abrasives means a change in polished surface quality. The aim of this research paper is to find the differences of CMP performances on hard disk between solid silica abrasives and porous silica abrasives. Approach: A kind of spherical porous silica abrasive was prepared and its CMP performances on hard disk had been investigated. The influences of polishing parameters including polishing time, down force and rotation speed on Material Removal Rate (MRR) and average roughness (Ra) were studied in hard disk substrate CMP with these prepared spherical porous SBA-15 abrasives and solid silica abrasives. Results: After polished in slurry containing solid SiO 2 , the surface became smooth and Ra decreased from 8.234-1.159 nm. However some small scratches still existed there. When polished with slurry containing spherical porous SBA-15 under the same polishing conditions, the surface became smoother, the scratches could hardly be observed and Ra decreased from 8.409-0.539 nm. Conclusion: Compared with solid silica abrasive, the prepared spherical porous silica abrasive has better hard disk substrates CMP performance under the same polishing conditions.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Preparation and Polishing Properties of Spherical Porous Silica Abrasive

Lei¹

2010

American Journal of Nanotechnology

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“…Silicon wafers are polished currently by chemical mechanical polishing (CMP) mostly. CMP technique has been widely used in planarizing semiconductor wafers and attracted more and more attention from the researchers [2][3][4]. Ceria has been commonly used as an abrasive for glass polishing.…”

Section: Introductionmentioning

confidence: 99%

Experimental Study on Cryogenic Polishing Single Silicon Wafer with Nano-Sized Cerium Dioxide Powders

Sun

Zuo

Zhu

et al. 2007

AMR

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Abstract. Cryogenic polishing single silicon wafer with nano-sized CeO 2 abrasives can be known as cryogenic fixed abrasives CMP (CFA-CMP). The abrasive slurry was made of nano-sized CeO 2 particles dispersed in de-ionized water with a surfactant and the polishing slurry froze to form cryogenic polishing pad. Then the polishing tests of the blanket silicon wafers in the presence of the cryogenic polishing pad containing the nano-particulates were carried out. The morphologies and surfaces roughness of the polished silicon wafers were observed and examined on an atomic force microscope (AFM). The results show that a super smooth surface with roughness of 0. 293 nm is obtained within 5000 nm× 5000 nm and the removal of material is dominated by plastic flowage.

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“…It contains abrasive particles such as SiO 2 and chemical reagents. Many researches are concerned with the particle behavior in the slurry and its effect on material removal rate and surface finish [1][2][3][4][5][6]. Particle abrasive [7,8] and hydrodynamic pressure [9,10] are considered to play an important role in the polishing processes.…”

Section: Introductionmentioning

confidence: 99%

Nano particles’ behavior in non-Newtonian slurry in mechanical process of CMP

et al. 2006

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Thin fluid film is thought to be formed between the wafer surface and the pad asperity. Hydrodynamic pressure on the surface asperity is periodically generated when particles are passing through it. Fatigue fracture occurs under the effect of periodic pressure, and the fatigue begins from the top to the bottom of the asperity. The removal rate is calculated based on the energy-balance fracture theory. Particle size and its relative velocity are important parameters that affect the polishing effect. Using the multiphase model and the power-law viscosity model of the slurry, particle's velocity and its distribution in the slurry are numerically calculated. The results indicate that the slurry film thickness needs to be in the same order of the particle size that the particle can generate effective hydrodynamic pressure to remove the asperity materials.

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CMP of hard disk substrate using a colloidal SiO2 slurry: preliminary experimental investigation

Cited by 127 publications

References 32 publications

Preparation and Polishing Properties of Spherical Porous Silica Abrasive

Preparation and Polishing Properties of Spherical Porous Silica Abrasive

Experimental Study on Cryogenic Polishing Single Silicon Wafer with Nano-Sized Cerium Dioxide Powders

Nano particles’ behavior in non-Newtonian slurry in mechanical process of CMP

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