Experimental Study on Cryogenic Polishing Single Silicon Wafer with Nano-Sized Cerium Dioxide Powders

2012

KEM

The necessity of fixed abrasive CMP in polishing semiconductor materials processing was analyzed. Compared the shortcomings of traditional free abrasive polishing with the advantages of fixed abrasive polishing, the applications of fixed abrasive polishing technology in semiconductor processing were described. A variety of fixed abrasive polishing pad production methods were introduced. The development trend of fixed abrasive polishing was prospected.

Section: Key Engineering Materials Vol 499mentioning

confidence: 99%

Status and Trends of Fixed Abrasive Polishing on Semiconductor

Zhao

2012

KEM

“…Some defects of the machined surface, such as residual stress, micro-cracks and surface damages, can be decreased in the cryogenic conditions [1]. In recent years, some polishing tests of hard and brittle materials in the presence of cryogenic polishing pad containing colloidal SiO 2 slurry, nano-sized CeO 2 or Al 2 O 3 slurry were carried out and smooth surfaces with nanometer or sub-nanometer roughness have been obtained [2][3][4]. However, during cryogenic polishing, the quantity of heat production in the polishing region can lead to the thawing of IFA polishing pad.…”

Section: Introductionmentioning

confidence: 99%

FEM Simulation on the Temperature Distribution of Ice Fixed Abrasives Polishing

et al. 2010

KEM

The key question in the ice fixed abrasives (IFA) polishing is how to keep suitable ambient temperature in production process in order to avoid premature failure of the IFA. Based on above, the three dimensions finite element analysis (FEA) model of IFA polishing temperature field is built up at first. Then, the model reliability is demonstrated by experiments. Effects of ambient temperature and polishing time on temperature distribution and melting rate of the IFA pad are researched. The results show that the ambient temperature should be kept at about 10 °C in order to control the melting rate of the IFA pad effectively and keep longer polishing time. All the results provide the basis for choosing suitable ambient temperature in polishing.

“…Some defects of the machined surface, such as residual stress, micro-cracks and surface damages, can be decreased in the cryogenic conditions [4]. In recent years, some polishing tests of hard and brittle materials in the presence of cryogenic polishing pad containing colloidal SiO 2 slurry, nano-sized CeO 2 or Al 2 O 3 slurry were carried out and smooth surfaces with nanometer or sub-nanometer roughness have been obtained [5,6]. However, during cryogenic polishing, the quantity of heat production in the polishing region can lead to the thawing of IFA polishing pad.…”

Section: Introductionmentioning

confidence: 99%

Temperature Distribution of IFA Polishing Single Silicon Wafer

et al. 2010

AMR

Self Cite

The ice fixed abrasives (IFA) polishing is a potential polishing process in the semiconductor industry to realize superior surface finish and planarity for semiconductor wafers. The key question in IFA polishing is how to keep suitable ambient temperature and melting rate in production process in order to avoid premature failure of the IFA pad. In this paper, effects of ambient temperature (T), pressure in cylinder (Pc), rotary speed of IFA pad (v) and eccentricity of pressure head (e) on temperature distribution and melting rate of the IFA pad are researched. The results show that T should be kept at about 10 °C in order to control the melting rate of the IFA pad effectively and keep longer polishing time. And suitable Pc, e can be kept at 0.075 MPa or 0.1 MPa and 20 mm or 30 mm, respectively. In order to increase IFA polishing efficiency, the rotary speed of IFA pad can be increased appropriately. All the results provide the basis for choosing suitable processing parameters in IFA polishing.