CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments

Hirono, T.; Barbero, M.; Breugnon, P.; Godiot, S.; Gonella, L.; Hemperek, T.; Huegging, F.; Krüger, H.; Liu, J.; Pangaud, P.; Perić, I.; Pohl, D.; Rozanov, A.; Rymaszewski, P.; Wang, Andrew; Wermes, N.

doi:10.1016/j.nima.2016.01.088

Cited by 20 publications

(24 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2. Values for breakdown voltage between 280 and 300 V were obtained, much higher than previous chip generation in the same technology [6]. This increase was possible by optimizing the guard ring structure based on TCAD simulations [7].…”

Section: Characterization Of Chip Performancementioning

confidence: 87%

Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

Iguaz

Balli

Barbero

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different preamplifier and discriminator flavors with an external injection signal and an iron source (5.9 keV x-rays).

show abstract

Section: Characterization Of Chip Performancementioning

confidence: 87%

Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

Iguaz

Balli

Barbero

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

show abstract

“…LF-MonoPix is the first fully monolithic prototype of a DMAPS series implemented in the LFoundry technology [15,16]. Its design has significant inputs from its ancestor LF-CPIX [16], e.g.…”

Section: Chip Overviewmentioning

confidence: 99%

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Wang¹,

Barbero²,

Berdalovic³

et al. 2018

J. Inst.

View full text Add to dashboard Cite

A: Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150 nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180 nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown. K: Depleted monolithic CMOS pixels, particle tracking detectors (solid-state detectors), Front-end electronics for detector readout, VLSI circuit 1Corresponding author.

show abstract

“…LF-CPIX has been developed for detailed studies of the sensor and analog readout. The design of the guard rings of the LF-CPIX has been optimized [10] according to the results of the first small prototype [5]. Each pixel has a charge sensitive amplifier (CSA), a discriminator with 4 bits of trim DAC (TDAC), and a register (HIT register).…”

Section: Prototypesmentioning

confidence: 99%

“…Based on the success of the first small HR large collection node DMAPS prototype [5,6], two prototypes have been developed to investigate the suitability of DMAPS as an ATLAS ITK pixel detector. This paper presents the radiation hardness of the HR large collection node DMAPS prototypes.…”

Section: Introductionmentioning

confidence: 99%

Depleted fully monolithic active CMOS pixel sensors (DMAPS) in high resistivity 150 nm technology for LHC

Hirono

Barbero

Barrillon

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

Self Cite

View full text Add to dashboard Cite

Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (≥ 2 kΩ·cm 2 ) wafers. The chip size is equivalent to that of the current ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and the analog readout of the DMAPS. The other is a fully monolithic DMAPS including fast readout digital logic that handles the required hit rate. In order to yield a strong homogeneous electric field within the sensor volume, thinning of the wafer was tested. The prototypes were irradiated with X-ray up to a total ionization dose (TID) of 50 Mrad and with neutrons up to non-ionizing energy loss (NIEL) of 10 15 n eq /cm 2 . The analog readout circuitry maintained its performance after TID irradiation, and the hit-efficiency at > 10 −7 noise occupancy was as high as 98.9 % after NIEL irradiation.

show abstract

CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments

Cited by 20 publications

References 5 publications

Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Depleted fully monolithic active CMOS pixel sensors (DMAPS) in high resistivity 150 nm technology for LHC

Contact Info

Product

Resources

About