Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

Iguaz, F.J.; Balli, F.; Barbero, M.; Bhat, S.; Breugnon, P.; Caicedo, I.; Chen, Z.; Değerli, Y.; Godiot, S.; Guilloux, F.; Guyot, C.; Hemperek, T.; Hirono, T.; Krüger, H.; Meyer, J.; Ouraou, A.; Pangaud, P.; Rymaszewski, P.; Schwemling, Philippe; Vandenbroucke, M.; Wang, T.; Wermes, N.

doi:10.1016/j.nima.2018.11.009

Cited by 3 publications

(1 citation statement)

References 7 publications

(8 reference statements)

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“…Moreover, previous e-TCT studies on test structures in LFoundry 150 nm CMOS [15] suggested that wafer thinning and back-side processing would result in an improvement in charge collection for irradiated thinned samples. By looking at their I-V curves (as depicted in Figure 3), the breakdown voltage was larger than 260 V independent of the sensor thickness or addition of metallization, in agreement with previous observations for unthinned samples [7,16]. I-V curves for back-side processed LF-Monopix samples of different thicknesses: 725 µm, 200 µm (with metallization) and 100 µm (without metallization).…”

Section: Leakage and Depletion After Thinningsupporting

confidence: 88%

The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

Caicedo¹,

Barbero²,

Barrillon³

et al. 2019

J. Inst.

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A: Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 kΩ cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 kΩ cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode.Both chips were operational after thinning down to 100 µm and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of 1 × 10 15 n eq /cm 2 and its implications for future designs are discussed.

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Section: Leakage and Depletion After Thinningsupporting

confidence: 88%

The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

Caicedo¹,

Barbero²,

Barrillon³

et al. 2019

J. Inst.

Self Cite

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Breakdown performance of guard ring designs for pixel detectors in 150 nm CMOS technology

Zhang,

Caicedo,

Hemperek

et al. 2024

Nuclear Instruments and Methods in Physics Research Section A:

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Review on depleted CMOS

Kugathasan¹

2019

Proceedings of the 27th International Workshop on Vertex Detectors — PoS(VERTEX2018)

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Monolithic active pixel sensors (MAPS) integrate both sensor matrix and readout circuitry in one piece of silicon. Pixel sensors in commercial CMOS technologies receive increasing interest for vertex and tracking detectors. They have advantages in detector assembly, production cost, and other benefits like lower material and higher granularity. Used for the first time in the STAR experiment, adopted for the ALICE experiment, they are being considered for future detectors, like the ATLAS HL-LHC upgrade, FCC and CLIC. The most aggressive applications require full depletion in the sensing volume where charge collection by drift improves timing and radiation tolerance to high-intensity hadron fluences. This paper addresses the improvements and challenges of depleted CMOS with insights on sensor and circuit design.

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Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

Cited by 3 publications

References 7 publications

The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

Breakdown performance of guard ring designs for pixel detectors in 150 nm CMOS technology

Review on depleted CMOS

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