CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs

Czornomaz, Lukas; Kazzi, Mario El; Hopstaken, M.; Caimi, Daniele; Machler, P.; Rossel, C.; Bjoerk, M.; Marchiori, Chiara; Siegwart, H.; Fompeyrine, J.

doi:10.1016/j.sse.2012.04.014

Cited by 42 publications

(33 citation statements)

References 13 publications

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“…4(a) delaminate and the contact resistance increases rapidly. Similar contact resistance degradation at around this temperature has also been observed in the Ni-InGaAs contact system [19], [20]. In 6 sets of test structures consisting of a total of 72 CTLMs, the average ρc obtained after 350 °C anneal is 4.5•10 [17].…”

Section: Ni Ohmic Contacts and Nano-tlm Characterizationsupporting

confidence: 71%

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Guo

Bennett

et al. 2015

IEEE Electron Device Lett.

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Section: Ni Ohmic Contacts and Nano-tlm Characterizationsupporting

confidence: 71%

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Guo

Bennett

et al. 2015

IEEE Electron Device Lett.

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“…4 This can put the NiInGaAs approach as a leading candidate for source and drain regions for InGaAs based devices and may allow development of novel devices thanks to its epitaxial and conductive nature. …”

Section: Discussionmentioning

confidence: 99%

“…One option for such regions is the silicide-like compound formed by solid state reaction between Ni and InGaAs; this approach holds also the advantage of self-alignment. [4][5][6][7] We have recently investigated this system electrically and showed a near ideal current-voltage behavior with a Schottky barrier height of 0.24 6 0.01 eV. 8 In x Ga 1Àx As based transistors with NiInGaAs S/D regions were investigated and found to function successfully with a very high peak velocity.…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study

Shekhter

Mehari

Ritter

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Thin epitaxial layers of NiInGaAs formed by solid state reaction of Ni on (100) In0.53Ga0.47As are used as metal source and drain regions for In0.53Ga0.47As metal oxide field effect transistors. Here, the authors present a structural and chemical analysis of this phase. The stoichiometry of the layer was determined as Ni2In0.53Ga0.47As. Transmission electron microscopy revealed an abrupt interface and a detailed x-ray diffraction analysis showed that the layer is of a hexagonal lattice, which grows epitaxially with the orientation relations of {100}InGaAs||{100}NiInGaAs; ⟨011¯⟩InGaAs||[001]NiInGaAs. Only one domain can be observed in this epitaxial growth. Understanding the structure of these layers is a crucial step not only in their incorporation into InGaAs based devices but also a step toward novel devices.

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“…This high injection velocity material is a promising candidate 20,21 for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) channels. The device is made of a 10-nm-thick InGaAs QW layer composed of 10% indium.…”

mentioning

confidence: 99%

Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera

Vigouroux

Delaye

Bernier

et al. 2014

Applied Physics Letters

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International audiencePrecession electron diffraction is an efficient technique to measure strain in nanostructures by precessing the electron beam, while maintaining a few nanometre probe size. Here, we show that an advanced diffraction pattern treatment allows reproducible and precise strain measurements to be obtained using a default 512 x 512 DigiSTAR off-axis camera both in advanced or non-corrected transmission electron microscopes. This treatment consists in both projective geometry correction of diffraction pattern distortions and strain Delaunay triangulation based analysis. Precision in the strain measurement is improved and reached 2.7 x 10(-4) with a probe size approaching 4.2 nm in diameter. This method is applied to the study of the strain state in InGaAs quantum-well (QW) devices elaborated on Si substrate. Results show that the GaAs/Si mismatch does not induce in-plane strain fluctuations in the InGaAs QW region. (C) 2014 AIP Publishing LLC

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CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs

Cited by 42 publications

References 13 publications

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study

Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera

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