Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Guo, Luke; Lu, Wenjie; Bennett, B. R.; Boos, J.B.; Alamo, J.A. del

doi:10.1109/led.2015.2421337

Cited by 14 publications

(9 citation statements)

References 20 publications

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“…For instance, Mohney and co-workers presented an extended study on distinct three- and four-layered ohmic contact metallization with Au cap layer to maintain a low metal sheet resistance to highly Be-doped InAs (>10 19 cm −3 ) with ρ c at a level of 10 −6 Ω·cm 2 [ 17 , 18 ]. Guo et al conducted an analysis on highly Be-doped InAs/InAsSb cap structure, yielding an ultralow ohmic contact with ρ c of 1.3 × 10 −8 Ω·cm 2 [ 19 ]. However, these works presented studies on alloyed contacts with complex metallization schemes and ρ c estimated solely at room temperature.…”

Section: Resultsmentioning

confidence: 99%

“…The thermal stability studies conducted by Lee et al [16] on InAs/graded InGaAs structure revealed that the In atoms diffuse and penetrate into the 110 nm thick Ti layer, leading to InAs film decomposition at 350 • C. Other more complex Au-containing metallization schemes were tested as well on InAs-based structures using distinct adhesive/barrier layers such as Pd, Co, Ni, etc. [17][18][19]. Nevertheless, Au is normally the main constituent of metallization schemes due to high electrical conductivity and excellent corrosion resistance [20] and is vital in processing semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

“…Other more complex Au-containing metallization schemes were tested as well on InAs-based structures using distinct adhesive/barrier layers such as Pd, Co, Ni, etc. [ 17 , 18 , 19 ]. Nevertheless, Au is normally the main constituent of metallization schemes due to high electrical conductivity and excellent corrosion resistance [ 20 ] and is vital in processing semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

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Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

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Wróbel

Boguski

et al. 2021

Sensors

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Narrow band-gap semiconductors, namely ternary InAsSb alloys, find substantial technological importance for mid-infrared application as photodetectors in medical diagnostics or environmental monitoring. Thus, it is crucial to develop electrical contacts for these materials because they are the fundamental blocks of all semiconductor devices. This study demonstrates that electroplated gold contacts can be considered as a simple and reliable metallization technology for the electrical-response examination of a test structure. Unalloyed electroplated Au contacts to InAsSb exhibit specific contact resistivity even lower than vacuum-deposited standard Ti–Au. Moreover, temperature-dependent transport properties, such as Hall carrier concentration and mobility, show similar trends, with a minor shift in the transition temperature. It can be associated with a difference in metallization technology, mainly the presence of a Ti interlayer in vacuum-deposited contacts. Such a transition may give insight into not only the gentle balance changes between conductivity channels but also an impression of changing the dominance of carrier type from p- to n-type. The magnetotransport experiments assisted with mobility spectrum analysis clearly show that such an interpretation is incorrect. InAsSb layers are strongly p-type dominant, with a clear contribution from valence band carriers observed at the whole analyzed temperature range. Furthermore, the presence of thermally activated band electrons is detected at temperatures higher than 220 K.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

Złotnik

Wróbel

Boguski

et al. 2021

Sensors

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“…Among all III-V semiconductors, the antimonide system, In x Ga 1-x Sb with 0<x<1, is most promising due to its high hole mobility and its strong response to compressive stress [1,6]. Planar InGaSb HEMT [7] and MOSFET [8,9] prototypes have been demonstrated with outstanding characteristics. Remarkable improvements have been reported when uniaxial compressive strain is applied [7].…”

Section: Introductionmentioning

confidence: 99%

“…Planar InGaSb HEMT [7] and MOSFET [8,9] prototypes have been demonstrated with outstanding characteristics. Remarkable improvements have been reported when uniaxial compressive strain is applied [7]. In order to deploy InGaSb in a future generation of CMOS technology, a 3D structure is necessary.…”

Section: Introductionmentioning

confidence: 99%

An InGaSb p-channel FinFET

Lu¹,

Kim

Klem

et al. 2015

2015 IEEE International Electron Devices Meeting (IEDM)

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We demonstrate the first InGaSb p-channel FinFET. Towards this goal, we have developed a fin dry-etch technology which yields fins as narrow as 15 nm with vertical sidewalls, an aspect ratio greater than 10 and low sidewall interface state density. We have also realized Si-compatible ohmic contacts with ultra-low contact resistivity of 3.5·10 -8 ·cm 2 . InGaSb FinFETs with fin widths down to 30 nm and gate lengths down to 100 nm have been fabricated. The Al 2 O 3 gate oxide has an EOT of 1.8 nm. A high g m of 122 S/ m is obtained in devices of W f = 100 nm and L g = 100 nm. In the smallest devices with W f = 30 nm and L g = 100 nm, a g m of 78 S/ m is achieved.

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