CMOS Active Inductors and Transformers

Yuan, Fei

doi:10.1007/978-0-387-76479-5

Cited by 105 publications

(38 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The resistance of the active inductor can be approximated by 1/g m,N4 since R B1 g m,N4 >>1 [10]. This measure enhances the bandwidth by approximately 15 %.…”

Section: B Bandwidth Enhancementmentioning

confidence: 98%

See 1 more Smart Citation

An inductor-less ultra-compact transimpedance amplifier for 30 Gbps in 28 nm CMOS with high energy-efficiency

Szilágyi

Henker

Ellinger

2014

2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS)

View full text Add to dashboard Cite

A transimpedace amplifier (TIA) for optical links with data rate (DR) of up to 30 Gbps is presented. The design uses several bandwidth and gain enhancement techniques such as regulated common-gate, transimpedance boosting by current injection, transimpedance/transadmittance feedback and active inductor. The design is realized in a 28 nm CMOS technology. Since the circuit does not use any passive planar inductor or other special radio frequency component the area is only 0.4 × 10 -3 mm 2 and is to our knowledge the smallest TIA reported to date in the 30 Gbps DR range. The measured bandwidth is 22 GHz with a power consumption of only 2 mW resulting in an energy efficiency of 0.067 pJ/bit. The gain of the TIA is approximately 43 dBΩ with only one stage. The TIA is suitable to be integrated into complex CMOS VLSI systems as an alternative to copper-based short-distance interconnects. An output buffer for 50 Ω matching was added to the output, allowing the measurement.

show abstract

“…The resistance of the active inductor can be approximated by 1/g m,N4 since R B1 g m,N4 >>1 [10]. This measure enhances the bandwidth by approximately 15 %.…”

Section: B Bandwidth Enhancementmentioning

confidence: 98%

“…For these reasons the load resistor RD1 of N1 in Fig. 1 is replaced by a Hara type of active inductor [10]. Transistor N4 has an inductive characteristic.…”

Section: B Bandwidth Enhancementmentioning

confidence: 99%

An inductor-less ultra-compact transimpedance amplifier for 30 Gbps in 28 nm CMOS with high energy-efficiency

Szilágyi

Henker

Ellinger

2014

2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS)

View full text Add to dashboard Cite

show abstract

“…Gyrator circuits [44,45] have been massively employed for IC implementation of active inductors to avoid integration of passive spiral inductors [46], which take up a lot of space. Recently, this topology has even been used in an IC to obtain a negative inductance dedicated to AMCs [47].…”

Section: Negative Inductance Based On Gyrator Circuitsmentioning

confidence: 99%

Negative inductance circuits for metamaterial bandwidth enhancement

et al. 2017

View full text Add to dashboard Cite

Abstract. Passive metamaterials have yet to be translated into applications on a large scale due in large part to their limited bandwidth. To overcome this limitation many authors have suggested coupling metamaterials to non-Foster circuits. However, up to now, the number of convincing demonstrations based on non-Foster metamaterials has been very limited. This paper intends to clarify why progress has been so slow, i.e., the fundamental difficulty in making a truly broadband and efficient non-Foster metamaterial. To this end, we consider two families of metamaterials, namely Artificial Magnetic Media and Artificial Magnetic Conductors. In both cases, it turns out that bandwidth enhancement requires negative inductance with almost zero resistance. To estimate bandwidth enhancement with actual non-Foster circuits, we consider two classes of such circuits, namely Linvill and gyrator. The issue of stability being critical, both metamaterial families are studied with equivalent circuits that include advanced models of these non-Foster circuits. Conclusions are different for Artificial Magnetic Media coupled to Linvill circuits and Artificial Magnetic Conductors coupled to gyrator circuits. In the first case, requirements for bandwidth enhancement and stability are very hard to meet simultaneously whereas, in the second case, an adjustment of the transistor gain does significantly increase bandwidth.

show abstract

“…The idea of active inductor originates from the theory of gyrator which is based on two back-to-back connected positive and negative transconductors [5,6]. As shown in Fig.…”

Section: Proposed Active Inductormentioning

confidence: 99%

Active inductor-based tunable impedance matching network for RF power amplifier application

et al. 2016

View full text Add to dashboard Cite

a b s t r a c tThis paper presents the use of a new structure of active inductor named cascoded flipped-active inductor (CASFAI) in a T-type high-pass tunable output matching network of a class-E RF power amplifier (RFPA) to control the output power and enhance the efficiency. The designed CASFAI behaves as an inductor in the frequency range of 0-6.9 GHz, and has reached to a maximum quality factor of 4406, inductance value of 7.56 nH, 3rd order harmonic distortion better than À 30 dB for 0 dBm input power, while consumes only 2 mW power. In order to consider the performance of the proposed active inductor-based tunable output matching network on the output power level and power added efficiency (PAE) of RFPA, the CASFAI is applied as a variable inductor to the output matching network of RFPA. The overall circuit is designed and validated in ADS in a 0.18 mm CMOS process and 1.5 V supply voltage. The results indicate that by increasing the inductance value of the matching network in constant operating frequency, the PAE peak moves from high power to low power levels without any degradation. Therefore, it is possible to maintain the power efficiency at the same maximum level for lower input drive levels.

show abstract

CMOS Active Inductors and Transformers

Cited by 105 publications

References 0 publications

An inductor-less ultra-compact transimpedance amplifier for 30 Gbps in 28 nm CMOS with high energy-efficiency

An inductor-less ultra-compact transimpedance amplifier for 30 Gbps in 28 nm CMOS with high energy-efficiency

Negative inductance circuits for metamaterial bandwidth enhancement

Active inductor-based tunable impedance matching network for RF power amplifier application

Contact Info

Product

Resources

About