2008
DOI: 10.1016/j.apsusc.2008.05.105
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Cluster SIMS using metal cluster complex ions

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Cited by 6 publications
(4 citation statements)
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“…Much effort has recently been devoted to alleviate these issues, for example, via sample cooling , or the use of a grazing incidence angle . On the other hand, there has been a recent increase in studies devoted to novel cluster ion sources, including C 24 H 12 + and C 80 + , Ir 4 (CO) 7 + , Au 400 4+ , and Ar 1500 + . There is a general consensus in the community that the optimal choice of primary ion for organic depth profiling is complex and dependent on the sample under study. , It is likely that different primary ion beams would be optimal for different applications.…”
mentioning
confidence: 99%
“…Much effort has recently been devoted to alleviate these issues, for example, via sample cooling , or the use of a grazing incidence angle . On the other hand, there has been a recent increase in studies devoted to novel cluster ion sources, including C 24 H 12 + and C 80 + , Ir 4 (CO) 7 + , Au 400 4+ , and Ar 1500 + . There is a general consensus in the community that the optimal choice of primary ion for organic depth profiling is complex and dependent on the sample under study. , It is likely that different primary ion beams would be optimal for different applications.…”
mentioning
confidence: 99%
“…59 -63,82 These sources are comprised of chemically synthesized organometallic compounds, which consist of a metallic framework of several metal atoms and surrounding ligands. 62 These clusters have much higher molecular weights as compared to more conventional cluster beams such as C 60 and SF 5 + , and are therefore expected to be much more useful for analysis of inorganic materials (see Chapter 2 for a discussion on the importance of mass matching). Thus far, the metal cluster complex ion beam has been shown to significantly improve depth resolutions for inorganic depth profiling applications over more conventional approaches (e.g., O 2 depth profiling).…”
Section: Other Sourcesmentioning
confidence: 99%
“…Therefore, many kinds of analytical equipment are used in order to monitor the amount of impurities and maintain the quality of devices. For example, X-ray photoelectron spectroscopy (XPS) [1], secondary ionization mass spectroscopy (SIMS) [2], and electron probe micro analysis (EPMA) [3] are very useful for detecting trace amounts of inorganic impurities. However, detection and identification of the organic impurities on a silicon wafer are still difficult.…”
Section: Introductionmentioning
confidence: 99%